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TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application
Unit: mm
Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C)
Complementary to 2SB906
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 3 A
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-05-19

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Electrical Characteristics (Ta = 25°C)
2SD1221
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 7 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 0.5 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 3 A
IC = 3 A, IB = 0.3 A
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 100 μA
― ― 100 μA
60 ― ―
V
60 300
20 ― ―
0.4 1.0
V
0.7 1.0
V
3.0 MHz
70 pF
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
IB1 OUTPUT 0.8
INPUT
tstg IB2 IB2
1.5
μs
VCC = 30 V
tf 0.8
IB1 = IB2 = 0.2 A, DUTY CYCLE 1%
Note: hFE classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300
Marking
D1221
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2 2010-05-19

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IC – VCE
90
3.0
80
70
Common emitter
60 Tc = 25°C
50
40
2.0 30
20
IB = 10 mA
1.0
0
0
02468
Collector-emitter voltage VCE (V)
hFE – IC
500
Common emitter
300 VCE = 5 V
Tc = 100°C
25
100 25
50
30
10
0.03
0.1 0.3
1
Collector current IC (A)
3
2SD1221
IC – VBE
3.0
Common emitter
VCE = 5 V
2.0
1.0 Tc = 100°C 25 25
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 10
0.3
0.1
0.05
Tc = 100°C
25
25
0.02
0.03
0.1 0.3
1
Collector current IC (A)
3
24
(1)
20
16
PC – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 mm × 50 mm × 0.8 mm
(3) No heat sink
12
8
4 (2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
175
3
Safe Operating Area
10
IC max (pulsed)*
5
3 IC max (continuous)
1 ms*
10 ms*
100 ms*
DC operation
(Tc = 25°C)
1
0.5
*: Single nonrepetitive pulse
0.3
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.1
1 3 10
VCEO max
30
Collector-emitter voltage VCE (V)
100
2010-05-19