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TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application
Unit: mm
Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C)
Complementary to 2SB906
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 3 A
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
2SD1221
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 7 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 0.5 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 3 A
IC = 3 A, IB = 0.3 A
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 100 μA
― ― 100 μA
60 ― ―
V
60 300
20 ― ―
0.4 1.0
V
0.7 1.0
V
3.0 MHz
70 pF
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
IB1 OUTPUT 0.8
INPUT
tstg IB2 IB2
1.5
μs
VCC = 30 V
tf 0.8
IB1 = IB2 = 0.2 A, DUTY CYCLE 1%
Note: hFE classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300
Marking
D1221
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
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IC – VCE
90
3.0
80
70
Common emitter
60 Tc = 25°C
50
40
2.0 30
20
IB = 10 mA
1.0
0
0
02468
Collector-emitter voltage VCE (V)
hFE – IC
500
Common emitter
300 VCE = 5 V
Tc = 100°C
25
100 25
50
30
10
0.03
0.1 0.3
1
Collector current IC (A)
3
2SD1221
IC – VBE
3.0
Common emitter
VCE = 5 V
2.0
1.0 Tc = 100°C 25 25
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 10
0.3
0.1
0.05
Tc = 100°C
25
25
0.02
0.03
0.1 0.3
1
Collector current IC (A)
3
24
(1)
20
16
PC – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 mm × 50 mm × 0.8 mm
(3) No heat sink
12
8
4 (2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
175
3
Safe Operating Area
10
IC max (pulsed)*
5
3 IC max (continuous)
1 ms*
10 ms*
100 ms*
DC operation
(Tc = 25°C)
1
0.5
*: Single nonrepetitive pulse
0.3
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.1
1 3 10
VCEO max
30
Collector-emitter voltage VCE (V)
100
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2SD1221
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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