D1224.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 D1224 데이타시트 다운로드

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2SD1224
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
· Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
30
10
1.5
0.15
1.0
10
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
Equivalent Circuit
BASE
COLLECTOR
EMITTER
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1 2002-07-23

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2SD1224
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 150 mA
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
30 ― ―
V
4000
― ― 1.5 V
― ― 2.2 V
Turn-on time
Switching time Storage time
Fall time
ton
OUTPUT
0.18
20 µs
IB1
INPUT
tstg
IB2
IB2
0.6 µs
VCC 15 V
tf IB1 = IB2 = 1 mA,
DUTY CYCLE 1%
0.3
Marking
D1224
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2 2002-07-23

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500 Common emitter
Tc = 25°C
IC – VCE
400
60
50
300
200
100
0
0
40
30
20
IB = 10 µA
0
12345
Collector-emitter voltage VCE (V)
6
IC – VCE
500 Common emitter
Tc = 50°C
400
300
200
160
140
120
100
80
60
100
0
0
40
IB = 20 µA
0
12345
Collector-emitter voltage VCE (V)
6
2SD1224
IC – VCE
500 Common emitter
Tc = 100°C
400
300
35
30
25
20
200
100
0
0
15
10
IB = 5 µA
0
12345
Collector-emitter voltage VCE (V)
6
IC – VBE
1.0
Common emitter
VCE = 2 V
0.8
0.6
Tc = 100°C 25 50
0.4
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base-emitter voltage VBE (V)
30000
10000
5000
3000
1000
500
300
0.002
hFE – IC
Tc = 100°C
25
50
0.01 0.03
Common emitter
VCE = 2 V
0.1 0.3
1
Collector current IC (A)
3
10
5
3
1
0.5
0.3
0.1
0.002
VCE (sat) – IC
Common emitter
IC/IB = 1000
Tc = 50°C
25
100
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
3 2002-07-23