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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1220
2SD1220
Power Amplifier Applications
Unit: mm
Complementary to 2SB905
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
150 V
150 V
6V
1.5 A
1.0 A
1.0
W
10
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05

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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 150 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE
(Note)
VCE = 5 V, IC = 200 mA
VCE (sat)
VBE
fT
Cob
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 5 mA
VCE = 5 V, IC = 200 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320
Marking
2SD1220
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
150
V
60 320
― ― 1.5 V
0.5 0.8
V
20 100 MHz
13 20 pF
D1220
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2 2010-02-05

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1.6
100 80
60
1.2
IC – VCE
40 Common emitter
20 Tc = 25°C
10
5
0.8
3
2
0.4
IB = 1 mA
0
0
0 4 8 12 16 20
Collector-emitter voltage VCE (V)
hFE – IC
300
10
5
100
VCE = 2 V
50
30
Common emitter
Tc = 25°C
10
20 50 100
300 500 1000
Collector current IC (mA)
2SD1220
IC – VBE
1.6
Common emitter
VCE = 5 V
1.2
0.8 Tc = 100°C
0.4
25
0
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
300 Tc = 100°C
25
0
100
hFE – IC
50
30 Common emitter
VCE = 10 V
5V
10
20 50 100
300
1000
Collector current IC (mA)
VCE (sat) – IC
0.5
Common emitter
0.3 Tc = 25°C
0.1
0.05
0.03
IC/IB = 10
5
0.01
10
30 100 300 1000
Collector current IC (mA)
VCE (sat) – IC
0.5
Common emitter
0.3 IC/IB = 10
0.1
0.05
Tc = 100°C
25
0.03
0
0.01
10
30 100 300 1000
Collector current IC (mA)
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