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FQB34P10TM_F085
100V P-Channel MOSFET
March 2012
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -33.5A, -100V, RDS(on) = 0.06@VGS = -10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 170 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Qualified to AEC Q101
• RoHS Compliant
D
G!
GS
D2-PAK
FQB Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
!
▶▲
!
D
FQB34P10TM_F085
-100
-33.5
-23.5
-134
± 25
2200
-33.5
15.5
-6.0
3.75
155
1.03
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 0.97 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2012 Fairchild Semiconductor Corporation
FQB34P10TM_F085 Rev. C1
1
www.fairchildsemi.com

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 150°C
VGS = -25 V, VDS = 0 V
VGS = 25 V, VDS = 0 V
-100
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
VGS = -10 V, ID = -16.75 A
-- 0.049 0.06
VDS = -40 V, ID = -16.75 A (Note 4) --
23
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 2240 2910
-- 730 950
-- 170 220
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -50 V, ID = -33.5 A,
RG = 25
(Note 4, 5)
VDS = -80 V, ID = -33.5 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
25 60
250 510
160 330
210 430
85 110
15 --
45 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -33.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = -33.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =3.9mH, IAS = -33.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -33.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
--
--
--
160
0.88
-33.5
-134
-4.0
--
--
A
A
V
ns
µC
FQB34P10TM_F085 Rev. C1
2 www.fairchildsemi.com

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Typical Characteristics
102 Top : -15V.0GSV
-10.0 V
-8.0 V
-7.0 V
-6.5 V
101
-5.5 V
-5.0 V
Bottom: -4.5 V
100
10-1
10-2
10-1
Note :
1. 250µ s Pulse Test
2. TC = 25
100 101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
VGS = - 10V
VGS = - 20V
Note: TJ =25
25 50 75 100 125 150 175 200
-ID , DrainCurrent [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Coss
Ciss
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Notes :
1.
2.
fV=GS1=M0HVz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101 175
25
100
10-1
2
-55
Notes :
1.
2.
2V5D0S µ=
-40V
s Pulse
Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
102
101
100
10-1
0.0
17525
Notes :
1.
2.
2V5G0Sµ=s0VPulse
Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = -20V
10 VDS = -50V
VDS = -80V
8
6
4
2
Note: ID = -33.5 A
0
0 20 40 60 80 100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
FQB34P10TM_F085 Rev. C1
3 www.fairchildsemi.com

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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1.
2.
IVDG=S
=0V
-250µ
A
-50 0 50 100 150
TJ, JunctionTemperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by RDS(on)
102
100 µs
1 ms
10 ms
101
DC
100
10-1
100
Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e7P5uoClse
101
-VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1.
2.
VIDG=S =-1-61.705VA
-50 0 50 100 150
TJ, Junction Temperature[oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D=0.5
0 .2
1 0 -1
0.1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
single pulse
Notes :
1.
2.
3.
ZDT θJuMJtCy-(TtF)Ca=c=t0oP.r9D,7MD*=Zt/1Wθ/tJ2CM(t)a x .
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Square W ave Pulse D uration [sec]
101
Figure 11. Transient Thermal Response Curve
FQB34P10TM_F085 Rev. C1
4
www.fairchildsemi.com

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Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
-10V
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VGS
10%
td(on)
t on
tr
VDS
90%
t off
td(off)
tf
-10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
DUT
IAS
BVDSS
FQB34P10TM_F085 Rev. C1 5 www.fairchildsemi.com