FDS9431A_F085.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 FDS9431A_F085 데이타시트 다운로드

No Preview Available !

FDS9431A_F085
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
DC/DC converter
Power management
Load switch
Battery protection
February 2010
tm
Features
-3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V
RDS(ON) = 0.180 @ VGS = -2.5 V.
Fast switching speed.
High density cell design for extremely low RDS(ON).
High power and current handling capability.
Qualified to AEC Q101
RoHS Compliant
D
D
D
D
5
6
SO-8
G
SS
S
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
RqJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9431A
FDS9431A_F085
13’’
©2010 Fairchild Semiconductor Corporation
FDS9431A_F085 Rev. A
1
4
3
2
1
Ratings
-20
±8
-3.5
-18
2.5
1.2
1.0
-55 to +150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
DBVDSS
DTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
DVGS(th)
DTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VGS = 0 V, ID = -250 mA
ID = -250 mA,Referenced to 25°C
-20
VDS = -16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
V
-28 mV/°C
-1 mA
100 nA
-100 nA
VDS = VGS, ID = -250 mA
-0.4
ID = -250 mA,Referenced to 25°C
-0.6
2
-1 V
mV/°C
VGS = -4.5 V, ID = -3.5 A
VGS = -2.5 V, ID = -3.0 A
VGS = -4.5 V, ID = -3.5 A
TJ=125°C
VGS = -4.5 V, VDS =-5 V
VDS = -5 V, ID = -3.5 A
0.110 0.130
0.140 0.180
0.155 0.220
-10
6.5
W
W
W
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
405 pF
170 pF
45 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 W
VDS = -5 V, ID = -3.5 A,
VGS = -4.5 V
6.5 13
20 35
31 50
21 35
6 8.5
0.8
1.3
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = -2.1 A (Note 2)
-2.1
-0.7 -1.2
A
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDS9431A_F085 Rev. A
2
www.fairchildsemi.com

No Preview Available !

Typical Characteristics
10
VGS= -4.5V
8
-3.5V
6
4
-2.5V
-2.0V
2
-1.5V
0
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 1. On-Region Characteristics.
2
1.8
V = -2.0V
GS
1.6
1.4
1.2
1
-2.5
-3.0
-3.5
-4.0
-4.5
0.8
0
2468
-I , DRAIN CURRENT (A)
D
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I = -1.6A
D
V GS = -4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
withTemperature.
0.5
I = -0.8A
D
0.4
0.3
T = 125°C
J
0.2
0.1 25°C
0
12345
-V ,GATE TO SOURCE VOLTAGE (V)
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V = -5V
DS
8
T = -55°C
A
25°C
125°C
6
4
2
0
0123
-V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
4
10
V = 0V
GS
1
T = 125°C
J
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
1.4
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS9431A_F085 Rev. A
3
www.fairchildsemi.com

No Preview Available !

Typical Characteristics (continued)
5
ID= -1.6A
4
3
VDS= -5V
-15V
2
1
0
0246
Qg, GATE CHARGE (nC)
8
Figure 7. Gate Charge Characteristics.
50
10 RD S( ON ) LI M IT
3
0 .5
VVGSG S== --44..55VV
SISNINGGLLEE PPUULLSSEE
0. 05 RRθJAθTJTAA=A=A==1122235555°°°°CCCC/W/W
100 us
1ms
10 ms
100 ms
1s
10
DC
s
0.01
0 .1
0 .3
12
5 10
30
- VD S , DR A IN -SO UR C E V OLTA GE (V)
Figure 9. Maximum Safe Operating Area.
2000
1000
Ciss
500
200
Cos s
100
50
0.1
f = 1 MHz
VG S = 0 V
0.2
0.5 1
2
5
-V DS , D R A IN T O S OU R CE V OLTA GE (V)
Cr s s
10 20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA= 125oC/W
40 TA= 25oC
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
00. 05
D = 0.5
0.2
0.1
0 .0 5
0 .0 2
0.0 1
S i n g le P ul se
00. 02
00. 01
0 .00 0 1
00. 01
0.01
0.1
t 1, TIME (s e c )
1
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(p k )
t1
t2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS9431A_F085 Rev. A
4
www.fairchildsemi.com

No Preview Available !

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
tm
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
FDS9431A_F085 Rev. A
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
5 www.fairchildsemi.com