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Ordering number : ENN2158A
2SB1229/2SD1835 PNP/NPN Epitaxial Planar Silicon Transistors
Driver Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching time.
Package Dimensions
unit:mm
2003B
[2SB1229/2SD1835]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
( ) : 2SB1229
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)1A, IB=(–)50mA
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
(–)60
(–)50
(–)6
(–)2
(–)3
0.75
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
(–)100 nA
(–)100 nA
100*
560*
40
150 MHz
12(22)
pF
0.15
0.4 V
(–0.3) (–0.7) V
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SB1229_2SD1835/D

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2SB1229/2SD1835
Continued from preceding page.
Parameter
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON TIme
Storage Time
Symbol
Conditions
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1A, IB=(–)50mA
IC=(–)10μA, IE=0
IC=(–)1mA, RBE=
IE=(–)10μA, IC=0
See specified Test Circuit
tstg See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SB1229/2SD1835 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
U
280 to 560
Switching Time Test Circuit
INPUT
VR
IB1
IB2
RB
OUTPUT
RL
50Ω
++
100μF
470μF
VBE= --5V
VCC
IC=10IB1= --10IB2=500mA, VCC=25V
(For PNP, the polarity is reversed.)
Ratings
min typ
(–)0.9
(–)60
(–)50
(–)6
60(60)
550
(450)
30
30
max
(–)1.2
Unit
V
V
V
V
ns
ns
ns
ns
ns
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--1200
--1000
--800
--600
--400
--200
0
0
IC -- VCE
--50mA
--20mA
--10mA
--8mA
--6mA
--4mA
--2mA
2SB1229
IB=0
--0.4 --0.8 --1.2 --1.6 --2.0 --2.4
Collector-to-Emitter Voltage, VCE – V ITR09360
IC -- VCE
--7mA
2SB1229
--6mA
--5mA
--4mA
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1200
1000
800
IC -- VCE
50mA
40mA
25mA
15mA
8mA
4mA
2mA
2SD1835
IB=0
0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter Voltage, VCE – V ITR09361
IC -- VCE
7mA
6mA
2SD1835
5mA
4mA
--3mA
--2mA
600 3mA
400 2mA
--1mA
200 1mA
IB=0
--2 --4 --6 --8 --10 --12
Collector-to-Emitter Voltage, VCE – V ITR09362
0 IB=0
0 2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE – V ITR09363
Rev.0 I Page 2 of 5 I www.onsemi.com

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2SB1229/2SD1835
IC -- VBE
IC -- VBE
--2.4 2.4
2SB1229
2SD1835
VCE= --2V
VCE=2V
--2.0 2.0
--1.6 1.6
--1.2 1.2
--0.8 0.8
--0.4 0.4
0
0
1000
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR09364
hFE -- IC
2SB1229
VCE= --2V
Ta=75°C
25°C
--25°C
100
7
5
3
2
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC – A
ITR09366
1000 fT -- IC
2SB1229
7 VCE=10V
5
3
2
0
0
1000
7
5
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR09365
hFE -- IC
2SD1835
VCE=2V
3 Ta=75°C
2 25°C
--25°C
100
7
5
3
2
7 0.01
1000
7
5
2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC – A
ITR09367
fT -- IC
2SD1835
VCE=10V
3
2
100
7
5
3
2
100
7
5
3
2
10
--10
2
100
7
5
2 3 5 7 --100 3 2 3 5 7 --1000 2 3
Collector Current, IC – mA
ITR09368
Cob -- VCB
2SB1229
f=1MHz
3
2
10
10
100
7
5
2 3 5 7 100
2 3 5 7 1000 2 3
Collector Current, IC – mA
ITR09369
Cob -- VCB
2SD1835
f=1MHz
3
2
10
7
5
--1.0
10
7
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR09370
5
1.0
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR09371
Rev.0 I Page 3 of 5 I www.onsemi.com

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2SB1229/2SD1835
VCE(sat) -- IC
5
2SB1229
3
2
IC / IB=20
--1000
7
5
3
2
--100
7
5
3
2
25°C
Ta=75°C
--25°C
--10
7 --0.01
2
3
Co5llec7to-r-0C.1urren2t,
3
IC
57
–A
--1.0
23
ITR09372
--10 VBE(sat) -- IC
2SB1229
7 IC / IB=20
5
VCE(sat) -- IC
5
2SD1835
3
2
IC / IB=20
1000
7
5
3
2
100
7
5
3 Ta=75°C
25°C
2
10
7 0.01
--25°C
2
3
Co5llec7tor0C.1urren2t,
3
IC
57
–A
1.0 2 3
ITR09373
10 VBE(sat) -- IC
2SD1835
7 IC / IB=20
5
33
22
--1.0 Ta= --25°C 25°C
7
5 75°C
3
7--0.01 2
5
3
ICP=3A
2 IC =2A
1.0
7
5
3
2
0.1
7
3
Co5llec7to--r0.C1 urren2 t,
3
IC
57
–A
--1.0
23
ITR09374
ASO
2SB1229 / 2SD1835
DC operation
5
3
2
Ta=25°C
0.01 Single pulse
7
5
(For PNP, minus sign is omitted.)
3 5 7 1.0 2 3 5 7 10
2 3 5 7 100
Collector-to-Emitter Voltage, VCE – V ITR09376
1.0 Ta= --25°C 25°C
7
5 75°C
3
7 0.01
1000
2
3
Co5llec7tor0.C1 urren2t,
3
IC
57
–A
1.0
23
ITR09375
PC -- Ta
2SB1229 / 2SD1835
800
750
600
400
200
00 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C ITR09377
Rev.0 I Page 4 of 5 I www.onsemi.com

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2SB1229/2SD1835
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2SB1229_2SD1835/D