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STI260N6F6
STP260N6F6
N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™
Power MOSFET in TO-220 and I²PAK packages
Features
Order codes
STI260N6F6
STP260N6F6
VDSS
60 V
RDS(on) max
ID
< 0.003 Ω 120 A
Low gate charge
Very low on-resistance
High avalanche ruggedness
Application
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
TAB
TAB
123
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STI260N6F6
STP260N6F6
Marking
260N6F6
Package
I²PAK
TO-220
Packaging
Tube
January 2012
Doc ID 17467 Rev 5
1/14
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Contents
Contents
STI260N6F6, STP260N6F6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 17467 Rev 5

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STI260N6F6, STP260N6F6
1 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
VDS
VGS
ID
ID
IDM (1)
PTOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Tstg Storage temperature
Tj Operating junction temperature
1. Current limited by package.
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
60
± 20
120
120
480
300
2
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 17467 Rev 5
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Electrical characteristics
2 Electrical characteristics
STI260N6F6, STP260N6F6
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V(BR)DSS
Drain-source breakdown
voltage (VGS = 0)
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
Test conditions
ID = 250 µA
VDS = 60 V
VDS = 60 V, TC=125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 60 A
Min. Typ. Max. Unit
60 V
1 µA
100 µA
± 100 nA
2
2.4
4V
3 mΩ
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 30 V, ID = 120 A,
VGS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
11400
- 850 -
368
pF
pF
pF
183 nC
- 53 - nC
41 nC
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 30 V, ID = 60 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
31.4
--
165
144.4
--
62.6
ns
ns
ns
ns
4/14 Doc ID 17467 Rev 5

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STI260N6F6, STP260N6F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VGS = 0
ISD = 120 A, VDD = 48 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
-
-
-
120 A
480 A
1.1 V
55.6 ns
116 nC
3.8 A
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17467 Rev 5
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