K13A25D.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 K13A25D 데이타시트 다운로드

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MOSFETs Silicon N-Channel MOS (π-MOS)
TK13A25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK13A25D
TO-220SIS
1: Gate (G)
2: Drain (D)
3: Source (S)
1 2011-10-10
Rev.2.0

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TK13A25D
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
(t = 1.0 s)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
250
±20
13
52
35
78
13
13
52
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 50 V, Tch = 25(initial), L = 0.77 mH, RG = 25 , IAR = 13 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
3.57 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2011-10-10
Rev.2.0

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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
VGS = ±20 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
Min
250
1.5
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
rg
tr
ton
tf
toff
Test Condition
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = OPEN, f = 1 MHz
See Figure 6.2.1.
Min
TK13A25D
Typ. Max Unit
±1
10

3.5
0.19 0.25
µA
V
Typ.
1100
8
66
5
40
55
20
130
Max
Unit
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Test Condition
VDD 200 V, VGS = 10 V, ID = 13 A
Qgs1
Qgd
Min Typ. Max Unit
25 nC
4.2
8.5
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
VDSF
trr
Qrr
Irr
Test Condition
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V
-dIDR/dt = 100 A/µs
Min Typ. Max Unit
  -1.7 V
180
ns
1.1 µC
12
A
3 2011-10-10
Rev.2.0