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2SJ509
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ509
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drainsource ON resistance
: RDS (ON) = 1.35 (typ.)
l High forward transfer admittance : |Yfs| = 0.7 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = −100 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Ta = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
100
100
±20
1
3
0.9
136.5
1
0.09
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
138 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 , IAR = 1 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-01-25

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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
VDD ≈ −80 V, VGS = 10 V,
Gatesource charge
Qgs ID = 1 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SJ509
Min
100
0.8
0.3
Typ.
1.68
1.34
0.7
135
22
48
Max
±10
100
2.0
2.5
1.9
Unit
µA
µA
V
V
S
pF
— 20 —
— 32 —
ns
— 25 —
— 130 —
— 6.3 —
— 4.1 —
— 2.2 —
nC
Min Typ. Max Unit
— — 1 A
— — 3 A
— — 1.5 V
— 90 — ns
— 180 —
nC
2 2002-01-25

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2SJ509
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3 2002-01-25