D1345.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 D1345 데이타시트 다운로드

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1345
DESCRIPTION
·High Switching Time
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@IC= 4A
·Wide Area of Safe Operation
·Complement to Type 2SB983
APPLICATIONS
·Inverters, converters
·Controllers for DC motor, pulse motor
·Switching power supplies
·General power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
12 A
IB Base Current-Continuous
1.5 A
IBM Base Current-Peak
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
4A
40 W
150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
3.1
UNIT
/W
isc websitewww.iscsemi.cn
1

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1345
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
ICBO Collector Cutoff Current
VCB= 40V; IE= 0
ICEO Collector Cutoff Current
VCE= 40V; IB= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 5A; VCE= 2V
fT Current-Gain—Bandwidth Product
Switching times
IC= 1A; VCE= 5V
ton Turn-on Time
tstg Storage Time
tf Fall Time
RL= 10Ω, VBB2= -5V
IC= 2A; IB1= -IB2= 0.2A
MIN TYP. MAX UNIT
50 V
0.4 V
1.2 V
0.1 mA
0.1 mA
0.1 mA
70 200
30
10 MHz
0.2 μs
0.9 μs
0.3 μs
isc websitewww.iscsemi.cn
2