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L-7113P3C
IR LED Phototransistor
Made with NPN silicon phototransistor chips.
FEATURES
Mechanically and spectrally matched to the L-7113 series infrared emitting LED Lamp
Water clear lens
RoHS compliant
ELECTRICAL AND RADIANT CHARACTERISTICS TA=25
Symbol
Parameter
VBR CEO Collector-to-Emitter Breakdown Voltage
VBR ECO Emitter-to-Collector Breakdown Voltage
VCE (SAT) Collector-to-Emitter Saturation Voltage
ICEO
TR
TF
I (ON)
Collector Dark Current
Rise Time (10% to 90%)
Fall Time (90% to 10%)
On State Collector Current
ABSOLUTE MAXIMUM RATING TA=25
Parameter
Collector-to-Emitter Voltage
Emitter-to-Collector Voltage
Power Dissipation at (or below) 25Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (>5mm for 5 sec)
DIMENSION
T-1 3/4 (5mm) Round
Min. Typ. Max. Unit
Test Condition
30 -
-
V
Ic = 100µA
Ee=0mW/cm²
5
-
-
V
IE = 100µA
Ee=0mW/cm²
-
-
0.8
V
Ic = 2mA
Ee=20mW/cm²
-
-
100
nA
VCE = 10V
Ee=0mW/cm²
- 15 - µs VCE=5V IC=1mA
- 15 - µs RL=1K
0.1 0.5
-
mA
VCE=5V Ee=1mW/cm²
λ=940nm
Max. Ratings
30V
5V
100mW
-40~ +85
-40~ +85
260