B1105.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B1105 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Complement to type 2SD1605
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SB1105
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-7
-3
30
150
-55~150
UNIT
V
V
V
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=<
V(BR)EBO Emitter-base breakdown voltage
IE=-50mA, IC=0
VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA
VCEsat-2 Collector-emitter saturation voltage IC=-3A ,IB=-30mA
VBEsat-1 Base-emitter saturation voltage
IC=-1.5A ,IB=-3mA
VBEsat-2 Base-emitter saturation voltage
IC=-3A ,IB=-30mA
ICBO Collector cut-off current
VCB=-120V, IE=0
ICEO Collector cut-off current
VCE=-100V, RBE=<
hFE DC current gain
IC=-1.5A ; VCE=-3V
VD Diode forward voltage
ID=-3A
Product Specification
2SB1105
MIN TYP. MAX UNIT
-120
V
-7 V
-1.5 V
-3.0 V
-2.0 V
-3.5 V
-100 µA
-10 µA
1000
3.0 V
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1105
Fig.2 Outline dimensions
3