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Data Sheet
September 2013
RFP70N06
N-Channel Power MOSFET
60V, 70A, 14 m
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA78440.
Ordering Information
PART NUMBER
RFP70N06
PACKAGE
TO-220AB
BRAND
RFP70N06
NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Features
• 70A, 60V
• rDS(on) = 0.014
• Temperature Compensated PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2005 Fairchild Semiconductor Corporation
RFP70N06 Rev. D1

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RFP70N06
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP70N06
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
60
60
70
Refer to Peak Current Curve
±20
Refer to UIS Curve
150
1.0
-55 to 175
300
260
V
V
A
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(10)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = 60V, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 70A, VGS = 10V (Figure 9)
VDD = 30V, ID 70A, RL = 0.43,
VGS = 10V, RGS = 2.5
(Figure 13)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 48V, ID = 70A,
RL = 0.68
Ig(REF) = 2.2mA
(Figure 13)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
TO-220
-
MIN TYP MAX UNITS
60 -
-
V
2 -4
V
- - 1 µA
- - 25 µA
- - ±100 nA
- - 0.014
- - 190 ns
- 10 -
ns
- 137 -
ns
- 32 -
ns
- 24 -
ns
- - 73 ns
- 120 156 nC
- 65 85 nC
- 5.0 6.5 nC
- 2250 -
pF
- 792 -
pF
- 206 -
pF
- - 1.0 oC/W
- - 62 oC/W
- --
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 70A
- 1.5 V
Reverse Recovery Time
trr ISD = 70A, dISD/dt = 100A/µs
- 52 ns
NOTES:
2. Pulse test: pulse width 300ms, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2005 Fairchild Semiconductor Corporation
RFP70N06 Rev. D1

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RFP70N06
Typical Performance Curves TC = 25oC, Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
70
60
50
40
30
20
10
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
100µs
100
OPERATION IN THIS
AREA MAY BE
10 LIMITED BY rDS(ON)
1ms
10ms
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2005 Fairchild Semiconductor Corporation
1000
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I25
1----7---51----5---0--T----C---
100 TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
FIGURE 5. PEAK CURRENT CAPABILITY
101
RFP70N06 Rev. D1

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RFP70N06
Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued)
300 If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
100 STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
200
160
120
80
40
0
0
VGS = 20V VGS = 10V
VGS = 8V
VGS = 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 6V
VGS = 5V
VGS = 4.5V
1 234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
FIGURE 7. SATURATION CHARACTERISTICS
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
160 VDD = 15V
-55oC
120
25oC
175oC
2.5
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
2 VGS = 10V, ID = 70A
1.5
80 1
40 0.5
0
02468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
10
0
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
VGS = VDS, ID = 250µA
1.5
2.0
ID = 250µA
1.5
1.0 1.0
0.5
0
-80 -40
0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.5
0
-80 -40
0
40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2005 Fairchild Semiconductor Corporation
RFP70N06 Rev. D1

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RFP70N06
Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued)
5000
4000
3000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGS
2000
1000
0
0
COSS
CRSS
5
10 15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
60
VDD = BVDSS
45
VDD = BVDSS
RL = 0.86
30
IG(REF) = 2.2mA
VGS = 10V
0.75 BVDSS
0.50 BVDSS
15 0.25 BVDSS
10
7.5
5
2.5
0
20 IG(REF)
IG(ACT)
t, TIME (µs)
80 IG(REF)
IG(ACT)
0
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
RGS
RL
DUT
+
VDD
-
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
©2005 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. SWITCHING WAVEFORMS
RFP70N06 Rev. D1