UPA2810.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 UPA2810 데이타시트 다운로드

No Preview Available !

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2810
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power
management applications of portable equipments.
FEATURES
Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 6.5 A)
Built-in gate protection diode
Thin type surface mount package with heat spreader
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are
connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
VGSS
ID(DC)
ID(pulse)
PT1
PT2
m20
m13
m78
1.5
3.8
V
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
55 to +150
°C
IAS 13 A
EAS
16.9
mJ
PACKAGE DRAWING (Unit: mm)
1
2
8
7
36
5
4
3.3±0.15
3.0±0.1
0.10 S
0.35
0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
0.4±0.1
0.4±0.1
1.75±0.1
EQUIVALENT CIRCUIT
Drain
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance Note2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19290EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008

No Preview Available !

μ PA2810
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 30 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 6.5 A
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 6.5 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 6.5 A,
VGS = 10 V,
RG = 10 Ω
VDD = 24 V,
VGS = 10 V,
ID = 13 A
IF = 13 A, VGS = 0 V
IF = 13 A, VGS = 0 V,
di/dt = 100 A/μs
1.0
7
Note Pulsed
TYP.
9.5
15
1860
400
300
11
19
160
100
40
6
14
0.87
50
40
MAX.
1
m10
2.5
12
23
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = 20 0 V
50 Ω
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
VDS()
90%
VDS
VDS
Wave Form 0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet G19290EJ1V0DS

No Preview Available !

μ PA2810
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
FORWARD BIAS SAFE OPERATING AREA
-1000
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
-100
-10
-1
-0.1
-0.01
ID(pulse)
PW
ID(DC)
RD(SV(oGn)SL=im1iti 0edV)
Single Pulse
Power
1i
1i 0
0s
1i 0
0m
1i
m
si
m
si
si
Dissipation Limit
ed
=200 μs
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3°C/Wi
10
Rth(ch-C) = 2.4°C/Wi
1
0.1
0.01
100 μ
Single Pulse
Rth(ch-A): Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-20
10 V
4.5 V
Pulsed
4.0 V
-15
3.8 V
FORWARD TRANSFER CHARACTERISTICS
-20
-15
-10 3.6 V
VGS = 3.0 V
3.4 V
-5
3.2 V
0
0
-0.2 -0.4 -0.6 -0.8
-1
VDS - Drain to Source Voltage - V
-10
-5
0
0
TA = 125°C
75°C
25°C
55°C
VDS = 10 V
Pulsed
-1 -2 -3 -4
VGS - Gate to Source Voltage - V
-5
Data Sheet G19290EJ1V0DS
3

No Preview Available !

μ PA2810
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2.5
-2
-1.5
-1
-0.5
0
-75
VDS = 10 V
ID = 1 mA
-25 25 75 125
Tch - Channel Temperature - °C
175
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
25
20
VGS = 4.5 V
15
10
5
0
-0.1
10 V
Pulsed
-1 -10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
ID = 13 A
25 Pulsed
20 VGS = 4.5 V
15
10 10 V
5
0
-75
-25 25 75 125
Tch - Channel Temperature - °C
175
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = 125°C
75°C
25°C
10 55°C
1
0.1
-0.1
VDS = 10 V
Pulsed
-1 -10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
ID = 13 A
25 Pulsed
20
15
10
5
0
0 -5 -10 -15 -20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10 -100
VDS - Drain to Source Voltage - V
4 Data Sheet G19290EJ1V0DS

No Preview Available !

μ PA2810
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-12
-10
VDD = 6 V
-8
15 V
24 V
-6
-4
-2
0
0
ID = 13 A
10 20 30
QG - Gate Charge - nC
40
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10 V
10 VGS = 4.5 V
0V
1
0.1
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
ORDERING INFORMATION
PART NUMBER
μ PA2810T1L-E1-AY Note
μ PA2810T1L-E2-AY Note
LEAD PLATING
Pure Sn
PACKING
Tape 3000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
8-pin HVSON (3333)
0.028 g TYP.
Data Sheet G19290EJ1V0DS
5