B1019.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B1019 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·Low saturation voltage
·Complement to type 2SD1412
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1019
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-70
-50
-5
-7
-1
2
30
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1019
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -50 V
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
-0.2 -0.4
V
VBEsat
Base-emitter saturation voltage
IC=-4A ;IB=-0.4A
-0.9 -1.2
V
ICBO Collector cut-off current
VCB=-70V; IE=0
-30 µA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-50 µA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70 240
hFE-2
DC current gain
IC=-4A ; VCE=-1V
30
fT Transition frequency
IC=-1A ; VCE=-4V
10 MHz
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
250 pF
Switching times
ton Turn-on time
ts Storage time
tf Fall time
RL=10?
IB1=-IB2=-0.3A
VCC=-30V
0.2 µs
2.5 µs
0.5 µs
hFE-1 Classifications
OY
70-140
120-240
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1019
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3