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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
www.DataSheet4UT.rcaonmsistor designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 11 mMAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 mMAX. (VGS = 5 V, ID = 40 A)
Low Ciss : Ciss = 2900 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
NP80N055CLE
NP80N055DLE
NP80N055ELE
PACKAGE
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
Drain Current (DC) Note1
Drain Current (Pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±80
±200
Total Power Dissipation (TA = 25 °C)
PT
1.8
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note3
Single Avalanche Energy Note3
PT
IAS
EAS
120
45 / 30 / 10
2.0 / 90 / 100
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW 10 µs, Duty cycle 1 %
3. Starting Tch = 25 °C, RG = 25 , VGS = 20 V0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25 °C/W
Channel to Ambient
Rth(ch-A)
83.3 °C/W
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14097EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000

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NP80N055CLE, NP80N055DLE, NP80N055ELE
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 40 A
RDS(on)2 VGS = 5 V, ID = 40 A
RDS(on)3 VGS = 4.5 V, ID = 40 A
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 40 A
Drain Leakage Current
IDSS VDS = 55 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
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Output Capacitance
Ciss
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
ID = 40 A, VGS(on) = 10 V, VDD = 28 V,
Rise Time
tr RG = 1
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge 1
QG1 ID = 80 A, VDD = 44 V, VGS = 10 V
Total Gate Charge 2
QG2 ID = 80 A, VDD = 44 V, VGS = 5 V
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D) IF = 80 A, VGS = 0 V
Reverse Recovery Time
trr IF = 80 A, VGS = 0 V, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
MIN. TYP. MAX. UNIT
8.4 11 m
10.3 13 m
11.3 15 m
1.5 2.0 2.5 V
20 40
S
10 µA
±10 µA
2900 4400 pF
380 570 pF
170 310 pF
22 48 ns
10 25 ns
62 120 ns
11 27 ns
50 75 nC
26 39 nC
12 nC
15 nC
1.0 V
50 ns
100 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS(on)
90%
10% 10%
tr td(off)
tf
ton toff
2 Data Sheet D14097EJ3V0DS

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NP80N055CLE, NP80N055DLE, NP80N055ELE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
100
80
60
40
www.DataSheet4U.com 20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
5 Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R(aDSt (VonG) SLi=m1it0edV)
ID(pulse)
ID(DC)
LimPoitweedr
DC
Dissipation
1 ms
PW
100 µs
=
10
µs
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100 100 mJ
90 mJ
80
60
IAS = 10 A
30 A
45 A
1
TC = 25˚C
Single Pulse
0.1
0.1 1 10
VDS - Drain to Source Voltage - V
100
40
20
2 mJ
0
25 50
75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3˚C/W
10
1 Rth(ch-C) = 1.25˚C/W
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10 100 1000
Data Sheet D14097EJ3V0DS
3

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NP80N055CLE, NP80N055DLE, NP80N055ELE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA = 50˚C
25˚C
1
75˚C
150˚C
175˚C
0.1
www.DataSheet4U.com
0.01
1
2 345
VGS - Gate to Source Voltage - V
6
5 Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
Pulsed
VGS =10 V
160
5V
120
4.5 V
80
40
00 1 2 3 4 5
VDS - Drain to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS =10V
Pulsed
10
TA = 175˚C
75˚C
1 25˚C
50˚C
0.1
0.01
0.01
0.1 1
10
ID - Drain Current - A
100
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30 Pulsed
20
VGS = 4.5 V
5V
10 V
10
0
1 10 100 1000
ID - Drain Current - A
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
ID = 40 A
10
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 µA
2.5
2.0
1.5
1.0
0.5
0
50 0 50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet D14097EJ3V0DS

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NP80N055CLE, NP80N055DLE, NP80N055ELE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
24 Pulsed
20
VGS = 4.5 V
16
5V
10 V
12
8
4
www.DataSheet4U.com 0
ID = 40 A
50 0 50 100 150
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
100
Coss
Crss
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100 VGS = 10 V
10
VGS = 0 V
1
0.10 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
tr
10
td(off)
td(on)
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1
10 100
IF - Drain Current - A
1
0.1 1
10 100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
70 14
60
50 VDD = 44 V
28 V
40 11 V
12
VGS
10
8
30 6
20 4
VDS
10
2
ID = 80 A
00
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
Data Sheet D14097EJ3V0DS
5