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NCV8450, NCV8450A
Self-Protected High Side
Driver with Temperature
and Current Limit
The NCV8450/A is a fully protected HighSide Smart Discrete
device with a typical RDS(on) of 1.0 W and an internal current limit of
0.8 A typical. The device can switch a wide variety of resistive,
inductive, and capacitive loads.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
Loss of Ground Protection
ESD Protection
Slew Rate Control for Low EMI
Very Low Standby Current
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
This is a PbFree Device
Typical Applications
Automotive
Industrial
PRODUCT SUMMARY
Symbol
Characteristics
VIN_CL
VD(on)
Ron
Overvoltage Protection
Operation Voltage
OnState Resistance
Value
54
4.5 45
1.0
Unit
V
V
W
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MARKING
DIAGRAM
SOT223
(TO261)
CASE 318E
AYW
XXXXXG
G
1
XXXXX = V8450 or 8450A
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 4
1
Publication Order Number:
NCV8450/D

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NCV8450, NCV8450A
VD (Pins 2, 4)
IN
(Pin 1)
R_IN
Control
Logic
Regulated
Charge Pump
Output
Clamping
Current
Limitation
Overtemperature
Detection
OUT
(Pin 3)
Figure 1. Block Diagram
PACKAGE PIN DESCRIPTION
Pin #
1
2
3
4
Symbol
IN
VD
OUT
VD
Description
Control Input, Active Low
Supply Voltage
Output
Supply Voltage
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NCV8450, NCV8450A
MAXIMUM RATINGS
Value
Rating
Symbol
Min
Max Unit
DC Supply Voltage (Note 1)
Load Dump Protection
(RI = 2 W, td = 400 ms, VIN = 0, 10 V, IL = 150 mA, Vbb = 13.5 V)
Input Current
Output Current (Note 1)
Total Power Dissipation
@ TA = 25°C (Note 2)
@ TA = 25°C (Note 3)
Electrostatic Discharge (Note 4)
(Human Body Model (HBM) 100 pF/1500 W)
Input
All other
VD
VLoaddump
Iin
Iout
PD
16 45 V
100 V
15 15 mA
Internally Limited
A
W
1.13
1.60
kV
1
5
Single Pulse Inductive Load Switching Energy (Note 4)
(VDD = 13.5 V, I = 465 mApk, L = 200 mH, TJStart = 150°C)
EAS
29 mJ
Operating Junction Temperature
TJ 40
+150
°C
Storage Temperature
Tstorage
55
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
2. Minimum Pad.
3. 1 in square pad size, FR4, 1 oz Cu.
4. Not subjected to production testing.
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance (Note 5)
JunctiontoAmbient (Note 2)
JunctiontoAmbient (Note 3)
5. Not subjected to production testing.
Symbol
RqJA
RqJA
Max Value
110
78.3
Unit
K/W
+
IIN
IN
ID
VD
VOUT
OUT
NCV8450/A
Figure 2. Applications Test Circuit
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NCV8450, NCV8450A
ELECTRICAL CHARACTERISTICS (6 v VD v 45 V; 40°C <TJ < 150°C unless otherwise specified)
Value
Rating
Symbol
Conditions
Min Typ Max
OUTPUT CHARACTERISTICS
Operating Supply Voltage
On Resistance
(Pin 1 Connected to GND)
Standby Current (Pin 1 Open)
INPUT CHARACTERISTICS
VSUPPLY
RON
ID
TJ = 25°C , IOUT = 150 mA, VD = 7 V 45 V
TJ = 150°C, IOUT = 150 mA, VD = 7 V 45 V
(Note 6)
TJ = 25°C , IOUT= 150 mA, VD = 6 V
VD v 20 V
VD > 20 V
4.5
1.0
1.4
45
2
3
1.1 2.1
0.6 10
100
Input Current – Off State
Input Current – On State
(Pin 1 Grounded)
IIN_OFF
IIN_ON
VOUT v 0.1 V, RL = 270 W, TJ = 25°C
VOUT v 0.1V, RL = 270 W, TJ = 150°C (Note 6)
50
40
1.5
3
Input Resistance (Note 6)
SWITCHING CHARACTERISTICS
RIN
1
TurnOn Time (Note 7)
(VIN = VD to 0 V) to 90% VOUT
tON
TurnOff Time (Note 7)
(VIN = 0 V to VD ) to 10% VOUT
tOFF
Slew Rate On (Note 7)
(VIN = VD to 0V) 10% to 30%
VOUT
dV/dtON
Slew Rate Off (Note 7)
(VIN = 0 V to VD) 70% to 40%
VOUT
dV/dtOFF
OUTPUT DIODE CHARACTERISTICS (Note 6)
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
125
30 100
175
60 150
4
0.7 4
4
0.9 4
DrainSource Diode Voltage
Continuous Reverse Drain
Current
VF
IS
IOUT = 0.2 A
TJ = 25°C
0.6
0.2
PROTECTION FUNCTIONS (Note 8)
Temperature Shutdown (Note 6)
Temperature Shutdown
Hysteresis (Note 6)
TSD
TSD_HYST
150 175
5
Output Current Limit
ILIM TJ = 40°C, VD = 13.5 V, tm = 100 ms (Note 6)
TJ = 25 °C, VD = 13.5 V, tm = 100 ms
1.5
0.8
TJ = 150 °C , VD = 13.5 V, tm = 100 ms (Note 6)
0.5
Output Clamp Voltage
(Inductive Load Switch Off)
At VOUT = VD VCLAMP
VCLAMP
IOUT = 4 mA
45 52
Overvoltage Protection
VIN_CL
ICLAMP = 4 mA
50 54
6. Not subjected to production testing
7. Only valid with high input slew rates
8. Protection functions are not designed for continuous repetitive operation and are considered outside normal operating range
Unit
V
W
mA
mA
mA
kW
ms
ms
V/ms
V/ms
V
A
°C
°C
A
V
V
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NCV8450, NCV8450A
TYPICAL CHARACTERISTIC CURVES
2.0
1.8 Iout = 150 mA
1.6
1.4
1.2 VD = 6 V
1.0
0.8 VD = 15 V
0.6
0.4
0.2
0
40 20 0
20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 3. RDS(on) vs. Temperature
5.0
4.5
4.0
3.5
3.0 125°C
2.5
2.0
150°C
25°C
40°C
1.5
1.0
0.5
0
0 10 20 30 40 50
VD (V)
Figure 5. RDS(on) vs. VD
1.0
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.60
VD = 6 V
VD = 9 V
TA = 25°C
0.1 0.2 0.3 0.4
OUTPUT LOAD (A)
Figure 4. RDS(on) vs. Output Load
0.5
80
RLOAD = 270 W
70
60 VD = 42 V
50
40
30 VD = 13.5 V
20
VD = 9 V
10
0
40 20 0
20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 6. Turn On Time vs. Temperature
140
RLOAD = 270 W
120
100 VD = 42 V
80
60 VD = 13.5 V
40 VD = 9 V
20
0
40 20 0
20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 7. Turn Off Time vs. Temperature
1.2
RLOAD = 270 W
1.0
0.8
0.6
0.4
VD = 42 V
VD = 13.5 V
VD = 9 V
0.2
0
40 20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 8. Slew Rate (ON) vs. Temperature
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