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NRVTSM245E
Surface Mount Trench
Schottky Power Rectifier
POWERMITE®
Power Surface Mount Package
Features
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Adapters & Flat Panel Displays
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics:
Powermite is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
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SCHOTTKY TRENCH
RECTIFIER
2.0 AMPERES, 45 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
MARKING DIAGRAM
M
1 E24G
2
M = Date Code
E24 = Device Code
G = Pb−Free Package
(Marking Style 1)
ORDERING INFORMATION
Device
Package
Shipping
NRVTSM245ET1G Powermite 3000 / Tape &
(Pb−Free)
Reel
NRVTSM245ET3G Powermite 12000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 0
1
Publication Order Number:
NRVTSM245E/D

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NRVTSM245E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(TL = 168°C)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = 167°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IO
IFRM
IFSM
2.0 A
4.0 A
50 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
6.3 °C/W
82 °C/W
200 °C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 2 A, TJ = 25°C)
VF V
0.65
(IF = 2 A, TJ = 125°C)
0.58
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
75 mA
3 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
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NRVTSM245E
TYPICAL CHARACTERISTICS
100 100
TA = 175°C
10 TA = 150°C
TA = 125°C
1
TA = 90°C
TA = 25°C
0.1
0.1
0.3
TA = −55°C
0.5 0.7
0.9
1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
TA = 150°C
10
TA = 125°C
TA = 175°C
TA = 90°C
1
TA = 25°C
0.1 TA = −55°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
TA = 175°C
TA = 150°C
TA = 125°C
TA = 90°C
TA = 25°C
1.E−01
1.E−02
1.E−03
1.E−04
TA = 175°C
TA = 150°C
TA = 125°C
TA = 90°C
TA = 25°C
1.E−07
5 15 25 35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−05
45 5 15 25 35 45
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
4
3
2
DC
Square Wave
10
0.1
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
1
0
10
RqJL = 6.3°C/W
30 50 70 90 110 130 150 170
TC, LEAD TEMPERATURE (°C)
Figure 6. Current Derating
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100
50%
20%
10 10%
5%
2%
1 1%
NRVTSM245E
TYPICAL CHARACTERISTICS
4
IPK/IAV = 10
3
IPK/IAV = 20
IPK/IAV = 5
2
1 DC
Square Wave
0
0 0.5 1.0 1.5 2.0 2.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 8. Thermal Response, Junction−to−Ambient
10
100 1000
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NRVTSM245E
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE F
−A−
S
C
J
F
0.08 (0.003) M T B S C S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
−B−
K
R
J
L
PIN 1
PIN 2
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 1.75 2.05 0.069 0.081
B 1.75 2.18 0.069 0.086
C 0.85 1.15 0.033 0.045
D 0.40 0.69 0.016 0.027
F 0.70 1.00 0.028 0.039
H -0.05 +0.10 -0.002 +0.004
J 0.10 0.25 0.004 0.010
K 3.60 3.90 0.142 0.154
L 0.50 0.80 0.020 0.031
R 1.20 1.50 0.047 0.059
S 0.50 REF
0.019 REF
H
−T−
D
0.08 (0.003) M T B S C S
SOLDERING FOOTPRINT*
2.67
0.105
0.635
0.025
0.762
0.030
2.54
0.100
1.27
0.050
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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NRVTSM245E/D