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NRVTSA4100E
Low Leakage Trench-based
Schottky Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
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SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMA
CASE 403D
STYLE 1
TE41
AYWWG
TE41
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
NRVTSA4100ET3G
SMA
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1
Publication Order Number:
NRVTSA4100E/D

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NRVTSA4100E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 142°C)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 135°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
4.0
8.0
150
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
Tstg −65 to +175 °C
TJ
−55 to +175
°C
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 1.0 Amps, TJ = 25°C)
(iF = 4.0 Amps, TJ = 25°C)
Symbol
RθJL
RθJA
Typ
Max Unit
16.2 °C/W
90 °C/W
vF
0.45
V
0.61 0.68
(iF = 1.0 Amps, TJ = 125°C)
(iF = 4.0 Amps, TJ = 125°C)
0.36 −
0.53 0.59
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
3.5 9.0 mA
2.0 5.0 mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
55
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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NRVTSA4100E
TYPICAL CHARACTERISTICS
100 100
10 TA = 175°C
TA = 150°C
TA = 125°C
1
TA = 25°C
0.1
0
TA = −55°C
0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1.E−01
1.E−02
TA = 175°C
1.E−03
1.E−04
TA = 150°C
TA = 125°C
TA = 85°C
TA = 175°C
10 TA = 150°C
TA = 125°C
1
TA = 25°C
TA = −55°C
0.1
1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
TA = 175°C
TA = 150°C
TA = 125°C
1.E−04
TA = 85°C
1.E−05
1.E−06
TA = 25°C
1.E−05
1.E−06
TA = 25°C
1.E−07
1.E−07
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0.1
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
8
7
DC
6
5 Square Wave
4
3
2
1 RqJL = 16.2°C/W
0
0 20 40 60
80 100 120 140
TC, LEAD TEMPERATURE (°C)
Figure 6. Current Derating
160
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NRVTSA4100E
TYPICAL CHARACTERISTICS
8
IPK/IAV
7 = 20
6
IPK/IAV = 10
IPK/IAV = 5
5
4 Square Wave
3
DC
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
100
1000
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HE
E
bD
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
NRVTSA4100E
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
MILLIMETERS
DIM MIN NOM MAX
A 1.97
2.10
2.20
A1 0.05
0.10
0.20
b 1.27 1.45 1.63
c 0.15 0.28 0.41
D 2.29
2.60
2.92
E 4.06 4.32 4.57
H E 4.83
5.21
5.59
L 0.76 1.14 1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
A
L c A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
ǒ mm Ǔ
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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NRVTSA4100E/D