FSGYE230R.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 FSGYE230R 데이타시트 다운로드

No Preview Available !

TM
Data Sheet
FSGYE230R
May 2000 File Number 4853.1
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Intersil Star*Power Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Intersil FS families have always featured.
The Intersil family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV, or Space
equivalent of MIL-S-19500.
Formerly available as type TA45230W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Engineering Samples FSGYE230D1
100K
TXV
FSGYE230R3
100K
Space
FSGYE230R4
Features
• 12A, 200V, rDS(ON) = 0.150
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 3.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Packaging
SMD.5
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power™ is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

No Preview Available !

FSGYE230R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
FSGYE230R
200
200
12
7
40
±30
42
17
0.33
36
12
40
-55 to 150
300
1.0 (Typ)
UNITS
V
V
A
A
A
V
W
W
W/ oC
A
A
A
oC
oC
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)12
td(ON)
tr
td(OFF)
tf
Qg (12)
Qgs
Qgd
Qg (20)
Qg (TH)
V(PLATEAU)
CISS
COSS
CRSS
RθJC
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
VDS = 160V,
VGS = 0V
VGS = ±30V
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 12V, ID = 12A
ID = 7A,
TC = 25oC
VGS = 12V
TC = 125oC
VDD = 100V, ID = 12A,
RL = 8.3, VGS = 12V,
RGS = 7.5
VGS = 0V to 12V
VDD = 100V,
ID = 12A
VGS = 0V to 20V
VGS = 0V to 2V
ID = 12A, VDS = 15V
VDS = 25V, VGS = 0V,
f = 1MHz
MIN TYP MAX UNITS
200 - - V
- - 5.5 V
2.0 - 4.5 V
1.0 - - V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
- - 1.86 V
-
0.120 0.150
-
-
0.285
- - 20 ns
- - 25 ns
- - 30 ns
- - 15 ns
- 26 28 nC
- 10 12 nC
- 8 10 nC
- 40 - nC
- 3 - nC
-7-V
- 1300 -
pF
- 230 -
pF
- 8 - pF
- - 3.0 oC/W
2

No Preview Available !

FSGYE230R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
ISD = 12A
ISD = 12A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
-
- 1.2
V
- - 210 ns
- 1.4 -
µC
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts
(Note 3)
BVDSS VGS = 0, ID = 1mA
200
Gate to Source Threshold Volts
(Note 3)
VGS(TH) VGS = VDS, ID = 1mA
2.0
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±30V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 160V
-
Drain to Source On-State Volts
(Notes 1, 3) VDS(ON) VGS = 12V, ID = 12A
-
Drain to Source On Resistance
(Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 7A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
4.5
100
25
1.86
0.150
UNITS
V
V
nA
µA
V
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ION
SPECIES
Br
TYPICAL LET
(MeV/mg/cm)
37
TYPICAL
RANGE (µ)
36
I 60 32
Au 82 28
Au 82 28
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
-20
(NOTE 6)
MAXIMUM
VDS BIAS (V)
200
-10 200
-5 160
-10 120
Performance Curves Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm2, RANGE = 28µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
200
160
120
80
40
TEMP = 25oC
0
0 -5 -10 -15 -20 -25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
240
LET = 37 BROMINE
200
160
120
LET = 82 GOLD
80
40 LET = 60 IODINE
0
0 -5 -10 -15 -20 -25 -30 -35 -40
VGS (V)
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3