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Semiconductor
June 1998
FSJ9055D,
FSJ9055R
55A, -60V, 0.029 Ohm, Rad Hard,
SEGR Resistant, P-Channel Power MOSFETs
Features
• 55A, -60V, rDS(ON) = 0.029
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSJ9055D1
10K TXV
FSJ9055D3
100K
Commercial
FSJ9055R1
100K
TXV
FSJ9055R3
100K
Space
FSJ9055R4
Formerly available as type TA17750.
Description
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
Symbol
D
G
S
Package
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1998
3-221
File Number 4415.1

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FSJ9055D, FSJ9055R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSJ9055D, FSJ9055R UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-60
-60
55
35
165
±20
125
50
1.20
V
V
A
A
A
V
W
W
W/ oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
165
55
165
-55 to 150
300
A
A
A
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)12
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (12)
Qg (TH)
Qgs
Qgd
V(PLATEAU)
CISS
COSS
CRSS
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = -48V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VGS = -12V, ID = 55A
ID = 35A,
VGS = -12V
TC = 25oC
TC = 125oC
VDD = -30V, ID = 55A,
RL = 0.55, VGS = -12V,
RGS = 2.35
VGS = 0V to -20V
VGS = 0V to -12V
VGS = 0V to -2V
VDD = -30V,
ID = 55A
ID = 55A, VDS = -15V
VDS = -25V, VGS = 0V,
f = 1MHz
MIN TYP MAX UNITS
60 - - V
- - -7.0 V
-2.0 - -6.0 V
-1.0 - - V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
- - -1.75 V
-
0.020 0.029
-
-
0.044
- - 55 ns
- - 90 ns
- - 80 ns
- - 35 ns
- - 250 nC
-
130 160
nC
- - 16 nC
- 36 48 nC
- 42 53 nC
- -6 - V
- 6300 -
pF
- 2250 -
pF
- 300 -
pF
- - 0.83 oC/W
- - 40 oC/W
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FSJ9055D, FSJ9055R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Forward Voltage
Reverse Recovery Time
VSD
ISD = 55A
trr ISD = 55A, dISD/dt = 100A/µs
-0.6 -
--
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
Gate to Source Threshold Volts (Note 3)
Gate to Body Leakage
(Notes 2, 3)
Zero Gate Leakage
(Note 3)
Drain to Source On-State Volts (Notes 1, 3)
Drain to Source On Resistance (Notes 1, 3)
NOTES:
BVDSS
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)12
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ±20V, VDS = 0V
VGS = 0, VDS = -48V
VGS = -12V, ID = 55A
VGS = -12V, ID = 35A
-60
-2.0
-
-
-
-
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
-1.8
110
MAX
-
-6.0
100
25
-1.75
0.029
UNITS
V
ns
UNITS
V
V
nA
µA
V
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43 20
Area
Br 37 36 10
Br 37 36 15
Br 37 36 20
Br 60 31 0
I 60 31 5
I 60 31 10
I 60 31 15
I 60 31 20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
-60
-60
-48
-36
-60
-48
-36
-24
-12
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 31µ
-70 FLUENCE = 1E5 IONS/cm2 (TYPICAL)
-60
1E-3
1E-4
-50
1E-5
-40
ILM = 10A
30A
100A
-30 300A
1E-6
-20
-10
TEMP = 25oC
0
1E-7
0 5 10 15 20 25
-10
VGS (V)
-30
-100
-300
DRAIN SUPPLY (V)
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
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