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FSJ264D, FSJ264R
June 1998
33A, 250V, 0.080 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
• 33A, 250V, rDS(ON) = 0.080
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 21nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13
Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSJ264D1
10K TXV
FSJ264D3
100K
Commercial
FSJ264R1
100K
TXV
FSJ264R3
100K
Space
FSJ264R4
Formerly available as type TA17668.
Description
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
D
G
Package
TO-254AA
G
S
D
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-149
File Number 4340.2

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FSJ264D, FSJ264R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSJ264D, FSJ264R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250
250
33
21
99
±20
192
77
1.54
V
V
A
A
A
V
W
W
W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
99
33
99
-55 to 150
300
A
A
A
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)12
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (12)
Qg (TH)
Qgs
Qgd
V(PLATEAU)
CISS
COSS
CRSS
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = 200V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VGS = 12V, ID = 33A
ID = 21A,
VGS = 12V
TC = 25oC
TC = 125oC
VDD = 125V, ID = 33A,
RL = 3.79, VGS 12V,
RGS = 2.35
VGS = 0V to 20V
VGS = 0V to 12V
VGS = 0V to 2V
VDD = 125V,
ID = 33A
ID = 33A, VDS = 15V
VDS = 25V, VGS = 0V,
f = 1MHz
MIN TYP MAX UNITS
250 - - V
- - 5.0 V
1.5 - 4.0 V
0.5 - - V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
- - 2.77 V
-
0.071 0.080
-
-
0.149
- - 35 ns
- - 60 ns
- - 110 ns
- - 25 ns
- - 300 nC
-
160 190
nC
- - 9.3 nC
- 30 42 nC
- 80 92 nC
-7-V
- 4400 -
pF
- 750 -
pF
- 230 -
pF
- - 0.65 oC/W
- - 40 oC/W
3-150

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FSJ264D, FSJ264R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Forward Voltage
Reverse Recovery Time
VSD
ISD = 33A
trr ISD = 33A, dISD/dt = 100A/µs
0.6
-
-
-
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL TEST CONDITIONS
MIN
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero to Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BVDSS
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)12
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ±20V, VDS = 0V
VGS = 0, VDS = 200V
VGS = 12V, ID = 33A
VGS = 12V, ID = 21A
250
1.5
-
-
-
-
1. Pulse test, 300µs max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
1.8
700
MAX
-
4.0
100
25
2.77
0.080
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43 -20
Area
Br 37 36 -5
Br 37 36 -10
Br 37 36 -15
Br 37 36 -20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
ns
UNITS
V
V
nA
µA
V
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
250
250
200
125
50
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
300
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-3
1E-4
200
1E-5
100 1E-6
ILM = 10A
30A
100A
300A
TEMP = 25oC
0
0 -5 -10 -15 -20 -25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-7
10
30 100 300
DRAIN SUPPLY (V)
1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
3-151