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MBR2045EMFS,
NRVB2045EMFS
Switch-mode
Power Rectifiers
These state−of−the−art devices have the following features:
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Applications
Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
Output Rectification in Compact Portable Consumer Applications
Freewheeling Diode used with Inductive Loads
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SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
45 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
A
Not Used
B2045E
AYWZZ
C
C
B2045E
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package Shipping
MBR2045EMFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
MBR2045EMFST3G
NRVB2045EMFST1G
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
NRVB2045EMFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
1
Publication Order Number:
MBR2045EMFS/D

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MBR2045EMFS, NRVB2045EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 130°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 120°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
V
45
20 A
40 A
400 A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg
TJ
EAS
−65 to +175
−55 to +150
150
3B
°C
°C
mJ
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
1.6 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 10 A, TJ = 125°C)
(iF = 10 A, TJ = 25°C)
(iF = 20 A, TJ = 125°C)
(iF = 20 A, TJ = 25°C)
vF V
0.35 0.47
0.45 0.56
0.43 0.58
0.51 0.64
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR mA
48 100
0.09 0.40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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100.00
MBR2045EMFS, NRVB2045EMFS
TYPICAL CHARACTERISTICS
100.00
10.00
TA = 150°C
10.00
TA = 150°C
125°C
1.00
25°C
−40°C
0.10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Voltage
1.00 125°C
25°C
−40°C
0.10
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Voltage
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
0
TA = 150°C
TA = 125°C
TA = 25°C
TA = −40°C
10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E+00
1.E−01
TA = 150°C
1.E−02
1.E−03
TA = 125°C
1.E−04
1.E−05
TA = 25°C
1.E−06
1.E−07
1.E−08
TA = −40°C
1.E−09
1.E−10
0 5 10 15 20 25 30 35 40 45
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10,000
1,000
TJ = 25°C
100
10
0 10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
60
55 RqJC = 1.6°C/W
50 dc
45
40
35 SQUARE WAVE
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
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MBR2045EMFS, NRVB2045EMFS
TYPICAL CHARACTERISTICS
8
7 IAPK/IAV = 20
IAPK/IAV = 10
6
5 IAPK/IAV = 5
4
3
2
SQUARE WAVE
1
DC
0
01234
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
Duty Cycle = 50%
20%
10 10%
5%
2%
1
1%
0.1
0.01 Single Pulse
0.001
0.000001
0.00001
0.0001
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Response
1
10 100 1000
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MBR2045EMFS, NRVB2045EMFS
PACKAGE DIMENSIONS
D
2
D1
2X
0.20 C
A
B 2X
E1
2E
1 2 34
TOP VIEW
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
8X b
0.10 C A B
0.05 c L
1
e/2
4
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
MILLIMETERS
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4 X b 0.33 0.41 0.51
q c 0.23 0.28 0.33
D 5.15 BSC
D1 4.70 4.90 5.10
c
A1
D2 3.80 4.00 4.20
E 6.15 BSC
E1 5.70 5.90 6.10
E2 3.45 3.65 3.85
e 1.27 BSC
3X
e
DETAIL A
C
SEATING
PLANE
G 0.51 0.61 0.71
K 1.20 1.35 1.50
L 0.51 0.61 0.71
L1 0.05 0.17 0.20
M 3.00 3.40 3.80
q 0 _ −−− 12 _
STYLE 2:
SOLDERING FOOTPRINT*
PIN 1. ANODE
2. ANODE
3. ANODE
3X
1.270
4X
0.750
4. NO CONNECT
5. CATHODE
4X
1.000
0.965
E2
PIN 5
(EXPOSED PAD)
K
L1 M
1.330
2X
0.495
3.200
2X
0.905
4.530
0.475
G D2
BOTTOM VIEW
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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MBR2045EMFS/D