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NTS12100EMFS,
NRVTS12100EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
LED Lighting
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
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TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
100 VOLTS
1,2,3
5,6
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
MARKING
DIAGRAM
A
A TE1210
A AYWWZZ
Not Used
C
C
TE1210
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package Shipping
NTS12100EMFST1G, SO−8 FL
1500 /
NRVTS12100EMFST1G (Pb−Free) Tape & Reel
NTS12100EMFST3G, SO−8 FL
5000 /
NRVTS12100EMFST3G (Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1
Publication Order Number:
NTS12100EMFS/D

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NTS12100EMFS, NRVTS12100EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 163°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 160°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
12
24
200
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +175 °C
TJ
−55 to +175
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
RθJC
Typ
2.0
Max Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 5 A, TJ = 25°C)
(iF = 12 A, TJ = 25°C)
Symbol
vF
Typ
0.52
0.65
Max Unit
V
0.73
(iF = 5 A, TJ = 125°C)
(iF = 12 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
0.46 −
0.57 0.64
iR
1.3 − mA
5.0 55 mA
(VR = 70 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
1.8 − mA
4.3 15 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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NTS12100EMFS, NRVTS12100EMFS
TYPICAL CHARACTERISTICS
100 100
10
TA = 125°C
TA = 150°C
1
TA = 25°C
TA = −55°C
10
TA = 125°C
1
TA = 150°C
TA = 25°C
TA = −55°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.10.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
TA = 175°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
TA = 175°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−06
1.E−07
0 10 20 30 40 50 60 70 80 90 100
0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10k 25
TJ = 25°C
RqJC = 2.0 °C/W
20 DC
15
Square Wave
1k
10
5
100
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
0
80 90 100 110 120 130 140 150 160 170
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating TO−220AB
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NTS12100EMFS, NRVTS12100EMFS
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
20
IPK/IAV = 20
18
16
IPK/IAV = 10
TJ = 175°C
14 IPK/IAV = 5
12
10
8
6
Square Wave
4
2 DC
0
0123 456 789
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
10
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Characteristics
1
10 100 1000
1 50% Duty Cycle
20%
10%
0.1 5%
2%
Single Pulse
0.01
0.000001
1%
0.00001
0.0001
0.001
0.01
0.1
1
10 100
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
1000
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NTS12100EMFS, NRVTS12100EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE L
D
2
D1
2X
0.20 C
A
B 2X
E1
2E
1 2 34
TOP VIEW
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
8X b
0.10 C A B
0.05 c L
1
e/2
4
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
c
4X
q
A1
3X
e
DETAIL A
C
SEATING
PLANE
MILLIMETERS
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
b 0.33 0.41 0.51
c 0.23 0.28 0.33
D 5.00 5.15 5.30
D1 4.70 4.90 5.10
D2 3.80 4.00 4.20
E 6.00 6.15 6.30
E1 5.70 5.90 6.10
E2 3.45 3.65 3.85
e 1.27 BSC
G 0.51 0.61 0.71
K 1.20 1.35 1.50
L 0.51 0.61 0.71
L1 0.125 REF
M 3.00 3.40 3.80
q 0 _ −−− 12 _
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.495
4.560
2X
1.530
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
3.200
4.530
E2
PIN 5
(EXPOSED PAD)
L1 M
2X
0.905
1
1.330
G D2
BOTTOM VIEW
0.965
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTS12100EMFS/D