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NTS12120MFS,
NRVTS12120MFS
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree and HalideFree Devices
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
LED Lighting
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
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TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
120 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
A
1
SO8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
Not Used
TH1212
AYWWZZ
TH1212
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
NTS12120MFST1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTS12120MFST3G
SO8 FL
5000 /
(PbFree) Tape & Reel
NRVTS12120MFST1G SO8 FL
1500 /
(PbFree) Tape & Reel
NRVTS12120MFST3G SO8 FL
5000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014 Rev. 1
1
Publication Order Number:
NTS12120MFS/D

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NTS12120MFS, NRVTS12120MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 138°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 136°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
120
12
24
200
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive)
ESD Rating (Human Body Model)
Tstg 65 to +150 °C
TJ
55 to +150
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
RθJC
Typ
2.0
Max Unit
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Instantaneous Forward Voltage (Note 1)
(IF = 6 A, TJ = 25°C)
(IF = 12 A, TJ = 25°C)
(IF = 6 A, TJ = 125°C)
(IF = 12 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
VF
IR
Typ
0.587
0.63
0.510
0.587
3.4
14.5
3.5
9.2
Max
0.83
0.68
75
40
Unit
V
mA
mA
mA
mA
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NTS12120MFS, NRVTS12120MFS
TYPICAL CHARACTERISTICS
100 100
10 TA = 125°C
10 TA = 125°C
1
0.1
0
1.E+00
TA = 150°C
TA = 25°C
TA = 55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1.0
TA = 150°C
1 TA = 25°C
TA = 55°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E01
1.E02
1.E03
1.E04
TA = 150°C
TA = 125°C
1.E01
1.E02
1.E03
TA = 150°C
TA = 125°C
1.E05
TA = 25°C
1.E04
TA = 25°C
1.E06
1.E05
0 10 20 30 40 50 60 70 80 90 100 110 120
0 10 20 30 40 50 60 70 80 90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10,000
1000
TJ = 25°C
100
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
25
RqJC = 2.0 °C/W
20 DC
15 Square Wave
10
5
0
80 90 100 110 120 130 140 150
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
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NTS12120MFS, NRVTS12120MFS
TYPICAL CHARACTERISTICS
20
18
IPK/IAV = 20
IPK/IAV = 10
16
TJ = 150°C
14
12 IPK/IAV = 5
10
8
6 Square Wave
4 DC
2
0
0123 456 78 9
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100 50% Duty Cycle
20%
10 10%
5%
2%
1 1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
Assumes 25°C ambient and soldered to
a 600 mm2 oz copper pad on PCB
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Characteristics
1
10 100 1000
10
1 50% Duty Cycle
20%
10%
0.1 5%
2%
1%
0.01 Single Pulse
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, JunctiontoCase
100
1000
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NTS12120MFS, NRVTS12120MFS
PACKAGE DIMENSIONS
D
2
D1
2X
0.20 C
A
B 2X
E1
2E
1 2 34
TOP VIEW
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
8X b
0.10 C A B
0.05 c L
e/2
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
c
4X
q
A1
3X
e
DETAIL A
C
SEATING
PLANE
MILLIMETERS
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00
−−− 0.05
b 0.33 0.41 0.51
c 0.23 0.28 0.33
D 5.15 BSC
D1 4.70 4.90 5.10
D2 3.80 4.00 4.20
E 6.15 BSC
E1 5.70 5.90 6.10
E2 3.45 3.65 3.85
e 1.27 BSC
G 0.51 0.61 0.71
K 1.20 1.35 1.50
L 0.51 0.61 0.71
L1 0.05 0.17 0.20
M 3.00 3.40 3.80
q 0 _ −−− 12 _
STYLE 2:
PIN 1. ANODE
SOLDERING FOOTPRINT*
2. ANODE
3. ANODE
3X
1.270
4X
0.750
4. NO CONNECT
5. CATHODE
4X
1.000
14
0.965
K
1.330
0.29X05
E2
PIN 5
(EXPOSED PAD)
L1 M
2X
0.495
3.200
4.530
0.475
G D2
BOTTOM VIEW
2X
1.530
4.560
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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For additional information, please contact your local
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NTS12120MFS/D