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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H13002
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -65~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………30W
VCBO——Collector-Base Voltage………………………………600V
VCEO——Collector-Emitter Voltage……………………………400V
VEBO——Emitter-Base Voltage………………………………9V
IC——Collector Current……………………………………1.5A
ELECTRICAL CHARACTERISTICSTa=25℃)
1BaseB
2CollectorC
3EmitterE
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
HFE
VCE(sat)1
VCE(sat)2
VBE(sat)
ICBO
IEBO
fT
tON
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Current Gain-Bandwidth Product
Turn On Time
600
400
9
10
8
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=1mAIC=0
40 VCE=10V, IC=0.1A
0.8 V IC=1A, IB=500mA
0.8 V IC=0.5A, IB=100mA
1.2 V IC=0.5A, IB=100mA
10 μA VCB=500V, IE=0
10 μA VEB=9V, IC=0
MHz VCE=10V,IC=0.1A,f=1MHz
1.1 μs
VCC=125V, IC=1A,
tSTG Storage Time
tF Fall Time
4.0 μs
0.7 μs
IB1=0.2A,IB2=-0.2A
RL=125Ω
hFE Classification
H1
10-16
H2
14-21
H3
19-26
H4
24-31
H5
29-40