K1194.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 K1194 데이타시트 다운로드

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SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
2SK1194
( F05E23 )
230V 0.5A
OUTLINE DIMENSIONS
Case : E-pack
(Unit : mm)
FEATURES
Applicable to 4V drive.
The static Rds(on) is small.
Built-in ZD for Gate Protection.
APPLICATION
DC/DC converters
Power supplies of DC 12-24V input
Product related to
Integrated Service Digital Network
RATINGS
Copyright & Copy;1999 Shindengen Electric Mfg.Co.Ltd

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VR Series Power MOSFET
2SK1194 ( F05E23 )
Electrical Characteristics Tc = 25
Item
Symbole
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 230V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±20V, VDS = 0V
Forward Tranconductance
gfs ID = 0.5A, VDS = 10V
Static Drain-Source On-tate Resistance RDS(ON) ID = 0.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 0.2mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 0.5A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg VGS = 10V, ID = 0.5A, VDD = 200V
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 10V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 0.5A, VGS = 10V, RL = 200Ω
Turn-Off Time
toff
Min. Typ. Max. Unit
230 V
250 μA
±0.1
0.2 0.4
S
5.5 8 Ω
234 V
1.5
20.8 /
2.7 nC
45
4.5 pF
30
30 60 ns
50 100
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

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2SK1194 Transfer Characteristics
1
0.8
Tc = 55°C
25°C
0.6 100°C
150°C
0.4
0.2
0
0
VDS = 10V
pulse test
TYP
2 4 6 8 10
Gate-Source Voltage VGS [V]