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2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Rating
100
100
4
4
5
1.8
40
150
–45 to +150
Unit
V
V
V
A
A
W
W
°C
°C

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2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
100
Emitter to base breakdown
voltage
V(BR)EBO
4
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I CEO
I EBO
hFE 50
25
Collector to emitter saturation VCE (sat)
voltage
Note: 1. Pulse test.
Typ
Max Unit
—V
—V
100 µA
50 µA
250
350
1.0 V
Test conditions
IC = 10 mA, RBE =
IE = 1 mA, IC = 0
VCE = 80 V, RBE =
VEB = 3.5 V, IC = 0
VCE = 4 V
IC = 0.5 A*1
IC = 50 mA
IC = 1 A, IB = 0.1 A
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
(10 V, 4 A)
3
1.0
DC Operation
TC = 25°C
(40 V, 1 A)
0.3
0.1
(100 V, 50 mA)
0.03
0.01
1
3
10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2

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Typical Output Characteristecs
1.0 10
TC = 25°C
8
0.8
6
0.6
4
0.4
2 mA
0.2
IB = 0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
10
IC = 10 IB
3
TC = 75°C
1.0
25°C
0.3 –25°C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3
Collector current IC (A)
10
2SD1137
1,000
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
300
TC = 75°C
100 25°C
–25°C
30
10
0.01 0.03 0.1 0.3 1.0 3
Collector current IC (A)
10
Base to Emitter Saturation Voltage
vs. Collector Current
1.5
IC = 10 IB
1.0
TC = –25°C
25°C
0.5 75°C
0
0.01 0.03 0.1 0.3 1.0 3
Collector current IC (A)
10
3