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2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Rating
100
100
4
4
5
1.8
40
150
–45 to +150
Unit
V
V
V
A
A
W
W
°C
°C

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2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
100
Emitter to base breakdown
voltage
V(BR)EBO
4
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I CEO
I EBO
hFE 50
25
Collector to emitter saturation VCE (sat)
voltage
Note: 1. Pulse test.
Typ
Max Unit
—V
—V
100 µA
50 µA
250
350
1.0 V
Test conditions
IC = 10 mA, RBE =
IE = 1 mA, IC = 0
VCE = 80 V, RBE =
VEB = 3.5 V, IC = 0
VCE = 4 V
IC = 0.5 A*1
IC = 50 mA
IC = 1 A, IB = 0.1 A
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
(10 V, 4 A)
3
1.0
DC Operation
TC = 25°C
(40 V, 1 A)
0.3
0.1
(100 V, 50 mA)
0.03
0.01
1
3
10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2

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Typical Output Characteristecs
1.0 10
TC = 25°C
8
0.8
6
0.6
4
0.4
2 mA
0.2
IB = 0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
10
IC = 10 IB
3
TC = 75°C
1.0
25°C
0.3 –25°C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3
Collector current IC (A)
10
2SD1137
1,000
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
300
TC = 75°C
100 25°C
–25°C
30
10
0.01 0.03 0.1 0.3 1.0 3
Collector current IC (A)
10
Base to Emitter Saturation Voltage
vs. Collector Current
1.5
IC = 10 IB
1.0
TC = –25°C
25°C
0.5 75°C
0
0.01 0.03 0.1 0.3 1.0 3
Collector current IC (A)
10
3

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11.5 MAX
10.16 ± 0.2
9.5
8.0
φ
3.6
+0.1
-0.08
Unit: mm
4.44 ± 0.2
1.26 ± 0.15
2.54 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g

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Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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