CS4N65A4D.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 CS4N65A4D 데이타시트 다운로드

No Preview Available !

Huajing Discrete Devices
Silicon N-Channel Power MOSFET
R
CS4N65 A4D
General Description
CS4N65 A4D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC)
l Low Reverse transfer capacitances(Typical: 8.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
4
75
2
Rating
650
4
3.2
16
±30
150
30
2.5
5.0
75
0.60
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012

No Preview Available !

Huajing Discrete Devices
R CS4N65 A4D
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
VGS=10V,ID=2A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =2A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =4A VDD = 325V
RG =12
ID =4A VDD =325V
VGS = 10V
Rating
Min. Typ. Max.
650 --
--
-- 0.67 --
-- --
1
-- -- 100
-- -- 10
-- -- -10
Unit
s
V
V/
µA
µA
µA
µA
Rating
Min. Typ. Max.
-- 2 2.5
2.0 4.0
Units
V
Rating
Min. Typ. Max.
3.5 --
-- 544
-- 55
-- 8.5
Units
S
pF
Rating
Min. Typ. Max.
-- 10 --
-- 11 --
-- 31 --
-- 16 --
-- 14.5
-- 3
-- 6
Units
ns
nC
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2012

No Preview Available !

Huajing Discrete Devices
R CS4N65 A4D
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp380µs,δ≤2%
Test Conditions
IS=4.0A,VGS=0V
IS=4.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 4
-- 16
-- 1.5
465 --
1.7 --
Units
A
A
V
ns
µC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
1.67 /W
62.5 /W
Gate-source Zener diode
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
Units
V
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10mH, ID=5.5A, Start TJ=25
a3ISD =4A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2012

No Preview Available !

Huajing Discrete Devices
R CS4N65 A4D
Characteristics Curve
100
10
1
OPERATION IN THIS AREA
0 .1 MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25Single Pulse
1ms
10ms
100ms
DC
0.01
1
10 100 1000
V ds , D rain-to-Source V oltage , V olts
Figure 1 Maximun Forward Bias Safe Operating Area
6
5
4
3
2
1
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
TC , Case Temperature , C
Figure 2 Maximun Power Dissipation vs Case Temperature
6
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25
VGS=15V
4.5
VGS=7V
3
VGS=6V
VGS=6.5V
1.5
VGS=4.5V
VGS=5.5V
0
0 25 50 75 100 125 150
TC , Case Temperature , C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
50%
0
0
5 10 15 20
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
20%
0.1 10%
5%
0.01
Single pulse
0.001
0.00001
2%
1%
PDM
t1
t2
NOTES
DUTY FACTOR D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
0.1
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10 2012
25
1

No Preview Available !

Huajing Discrete Devices
R CS4N65 A4D
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
1
1.00E-05
1.00E-04
9
PULSE DURATION = 10μs
7.5 DUTY CYCLE = 0.5%MAX
VDS=30V
1.00E-03
1.00E-02
t Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
6
5
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
6
4.5
3 -55
+25
1.5
+150
4
ID= 4A
3 ID= 2A
ID= 1A
2
1
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
3
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
2.5
0
6 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
1.75
2
VGS=20V
1.5
1.25
1.5 1
0.75
1
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012