2SA614.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SA614 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA614
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -55V (Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V (Max.)@ IC= -1A
·Collector Power Dissipation-
: PC= 25W@ TC= 25
APPLICATIONS
·Designed for medium power amplifier applications.
i.cnABSOLUTE MAXIMUM RATINGS(Ta=25)
.iscsemSYMBOL
PARAMETER
VALUE UNIT
wwwVCBO Collector-Base Voltage
-80 V
VCEO Collector-Emitter Voltage
-55 V
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-3 A
PC Collector Power Dissipation
25 W
TJ Junction Temperature
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA614
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
-55
V(BR)CBO Collector-Base Breakdown Voltage
IC= -500μA; IE= 0
-80
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -500μA; IC= 0
-5
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A
ICBO Collector Cutoff Current
VCB= -80V; IE= 0
IEBO Emitter Cutoff Current
.iscsemi.cnhFE DC Current Gain
w‹ hFE Classifications
wwR O Y
VEB= -5; IC= 0
IC= -0.5A; VCE= -5V
40
40-80 70-140 120-240
V
V
V
-0.5 V
-50 μA
-50 μA
240
isc Websitewww.iscsemi.cn
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