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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1217
DESCRIPTION
·High Collector Current -IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Complement to Type 2SD1818
APPLICATIONS
·Designed for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous -3 A
ICP Collector Current-Pulse
-5 A
IBB Base Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
10
1.3
150
-55~150
A
W
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1217
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1.5A; IB=B -0.15A
ICBO Collector Cutoff Current
VCB= -60V; IE= 0
IEBO Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.2A ; VCE= -2V
hFE-2
DC Current Gain
IC= -0.6A ; VCE= -2V
hFE-3
DC Current Gain
IC= -2.0A ; VCE= -2V
Switching Times
ton Turn-On Time
tstg Storage Time
tf Fall Time
IC= -1.0A; IB1= -IB2= -0.1A;
RL= 10Ω; VCC-10V
MIN TYP. MAX UNIT
-0.3 V
-1.2 V
-10 μA
-10 μA
60
100 400
50
0.5 μs
2.0 μs
0.5 μs
‹ hFE-2 Classifications
ML K
100-200 160-320 200-400
isc Websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet4u.com/