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FQA90N15_F109
N-Channel QFET® MOSFET
150 V, 90 A, 18
Features
• RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
• Low Gate Charge (Typ. 220 nC)
Low Crss (Typ. 200 pF)
• 100% Avalanche Tested
175°C Maximum Junction Memperature Rating
July 2015
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
FQA90N15_F109
150
90
63.5
360
±25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
FQA90N15_F109
0.4
0.24
40
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com

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Package Marking and Ordering Information
Part Number
FQA90N15_F109
Top Mark
FQA90N15
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 150V, VGS = 0V
VDS = 120V, TC = 150°C
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 45A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 45A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 75V, ID = 90A
RG = 25Ω
VDS = 120V, ID = 90A
VGS = 10V
(Note 4)
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 90A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/μs
150
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.29 mH, IAS = 90 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD 90 A, di/dt 300 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ.
--
0.15
--
--
--
--
--
0.014
68
6700
1400
200
105
760
470
410
220
43
110
--
--
--
175
0.97
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
4.0
0.018
--
V
Ω
S
8700
1800
260
pF
pF
pF
220
1500
950
830
285
--
--
ns
ns
ns
ns
nC
nC
nC
90 A
360 A
1.5 V
-- ns
-- μC
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
2
www.fairchildsemi.com

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Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
102
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25oC
100
VDS, Drain-Source Voltage [V]
101
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.09
0.06
0.03
0.00
0
VGS = 10V
VGS = 20V
Note : TJ = 25oC
50 100 150 200 250 300
ID , Drain Current [A]
Figure 5. Capacitance Characteristics
18000
15000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
12000
9000
Ciss
Coss
6000
3000
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
2
175oC
25oC
-55oC
Notes :
1. VDS = 30V
2. 250μs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
102
101
100
10-1
0.0
175oC 25oC
Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.8 1.2 1.6 2.0
VSD , Source-Drain Voltage [V]
2.4
Figure 6. Gate Charge Characteristics
12
10 VDS = 30V
VDS = 75V
8 VDS = 120V
6
4
2
Note : ID = 90 A
0
0 50 100 150 200 250
QG, Total Gate Charge [nC]
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
3
www.fairchildsemi.com

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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 9. Maximum Safe Operating Area
103
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
100 μs 10 μs
1 ms
10 ms
DC
Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
VDS, Drain-Source Voltage [V]
102
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. I = 45 A
D
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
Figure 11. Transient Thermal Response Curve
D = 0.5
1 0 -1
0 .2
1 0 -2
0 .1
0.0 5
0 .0 2
0 .0 1
s in g le p u se
N o te s :
1 . Z ? JC(t) = 0 .4 oC /W M a x.
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P DM * Z ? JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
4
www.fairchildsemi.com

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Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = const.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VGS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
VGS
DUT
VDD
VDS (t)
t p t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
5
www.fairchildsemi.com