MCP4104.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 MCP4104 데이타시트 다운로드

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Freescale
N-Channel 40-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
IRF4104/ MCP4104
VDS (V)
40
PRODUCT SUMMARY
rDS(on) (mΩ)
5 @ VGS = 10V
7.5 @ VGS = 5.5V
ID(A)
90a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 40
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
90
360
90
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
1
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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Freescale
IRF4104/ MCP4104
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 45 A
VGS = 5.5 V, ID = 40 A
VDS = 15 V, ID = 20 A
IS = 55 A, VGS = 0 V
Dynamic
VDS = 20 V, VGS = 5.5 V,
ID = 20 A
VDS = 20 V, RL = 1 Ω,
ID = 20 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min Typ Max Unit
1V
±100 nA
1 uA
25
120 A
5
7.5
30 S
0.89 V
69
31
31
37
45
112
39
9569
768
548
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notice to any products herein. FREESCALE makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation
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IRF4104/ MCP4104
Typical Electrical Characteristics
0.015
0.01
5V
100
TJ = 25°C
80
60
0.005
5.5V
6V,8V,10V
0
0 20 40 60 80 100
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
40
20
0
0
246
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
8
0.03
0.025
TJ = 25°C
ID = 20A
0.02
0.015
0.01
0.005
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
100
TJ = 25°C
10
1
0.1
0.01
0.2 0.4 0.6 0.8 1 1.2
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
100
10V,8V,6V
80
60
5.5V
15000
10000
Ciss
F = 1MHz
40
20
0
0
5V
0.2 0.4 0.6
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
0.8
3
5000
Coss
0 Crss
05
10 15 20
VDS-Drain-to-Source Voltage (V)
6. Capacitance
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IRF4104/ MCP4104
10
VDS = 20V
ID = 20A
8
6
4
2
Typical Electrical Characteristics
2.5
2
1.5
1
0
0
1000
100
10
1
0.1
0.01
0.1
50 100
Qg - Total Gate Charge (nC)
7. Gate Charge
150
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
1 DC
Idm limit
Limited by
RDS
1 10 100 1000
VDS Drain to Source Voltage (V)
9. Safe Operating Area
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ -JunctionTemperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
500
450
400
350
300
250
200
150
100
50
0
0.001 0.01 0.1 1 10 100 1000
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
RθJA(t) = r(t) + RθJA
RθJA = 62.5 °C /W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01 0.1 1 10
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
100
1000
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Freescale
Package Information
IRF4104/ MCP4104
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