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MCP631/2/3/4/5/9
24 MHz, 2.5 mA Rail-to-Rail Output (RRO) Op Amps
Features:
Description:
• Gain-Bandwidth Product: 24 MHz
• Slew Rate: 10 V/µs
• Noise: 10 nV/Hz at 1 MHz)
• Low Input Bias Current: 4 pA (typical)
• Ease of Use:
- Unity-Gain Stable
- Rail-to-Rail Output
- Input Range including Negative Rail
- No Phase Reversal
• Supply Voltage Range: +2.5V to +5.5V
• High Output Current: ±70 mA
• Supply Current: 2.5 mA/ch (typical)
• Low-Power Mode: 1 µA/ch
• Small Packages: SOT23-5, DFN
• Extended Temperature Range: -40°C to +125°C
Typical Applications:
• Fast Low-Side Current Sensing
• Point-of-Load Control Loops
• Power Amplifier Control Loops
• Barcode Scanners
• Optical Detector Amplifier
• Multi-Pole Active Filter
Design Aids:
The Microchip Technology Inc. MCP631/2/3/4/5/9
family of operational amplifiers features high gain
bandwidth product (24 MHz, typical) and high output
short-circuit current (70 mA, typical). Some also
provide a Chip Select (CS) pin that supports a
low-power mode of operation. These amplifiers are
optimized for high speed, low noise and distortion,
single-supply operation with rail-to-rail output and an
input that includes the negative rail.
This family is offered in single (MCP631), single with
CS pin (MCP633), dual (MCP632), dual with two CS
pins (MCP635), quad (MCP634) and quad with two
Chip Select pins (MCP639). All devices are fully
specified from -40°C to +125°C.
Typical Application Circuit
0A – 20 A
51.1
0.005
+5V
+
-
MCP63X
VOUT
0V – 4V
51.1
2.0 k
• SPICE Macro Models
• FilterLab® Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
High Gain-Bandwidth Op Amp Portfolio
Model Family
MCP621/1S/2/3/4/5/9
MCP631/2/3/4/5/9
MCP651/1S/2/3/4/5/9
MCP660/1/2/3/4/5/9
Channels/Package
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3, 4
Gain-Bandwidth
20 MHz
24 MHz
50 MHz
60 MHz
VOS (max.)
0.2 mV
8.0 mV
0.2 mV
8.0 mV
IQ/Ch (typ.)
2.5 mA
2.5 mA
6.0 mA
6.0 mA
2009-2014 Microchip Technology Inc.
DS20002197C-page 1

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MCP631/2/3/4/5/9
Package Types
MCP631
SOIC
NC 1
VIN– 2
VIN+ 3
VSS 4
8 NC
7 VDD
6 VOUT
5 NC
MCP631
2x3 TDFN*
NC 1
8 NC
VIN– 2 EP 7 VDD
VIN+ 3 9 6 VOUT
VSS 4
5 NC
MCP631
SOT-23-5
VOUT 1
5 VDD
VSS 2
VIN+ 3
4 VIN-
MCP634
SOIC, TSSOP
VOUTA 1
VINA- 2
VINA+ 3
VDD 4
VINB+ 5
VINB- 6
VOUTB 7
14 VOUTD
13 VIND-
12 VIND+
11 VSS
10 VINC+
9 VINC-
8 VOUTC
MCP632
SOIC
MCP632
3x3 DFN*
VOUTA 1
VINA2
VINA+ 3
VSS 4
8 VDD VOUTA 1
7 VOUTB VINA– 2
6 VINB- VINA+ 3
5 VINB+
VSS 4
8 VDD
EP 7 VOUTB
9 6 VINB
5 VINB+
MCP633
SOT-23-6
VOUT 1
6 VDD
VSS 2
VIN+ 3
5 CS
4 VIN-
MCP633
SOIC
NC 1
VIN– 2
VIN+ 3
VSS 4
8 CS
7 VDD
6 VOUT
5 NC
MCP635
MSOP
VOUTA 1
VINA2
VINA+ 3
VSS 4
CSA 5
10 VDD
9 VOUTB
8 VINB-
7 VINB+
6 CSB
MCP635
3x3 DFN*
VOUTA 1
VINA2
VINA+ 3
VSS 4
CSA 5
10 VDD
9 VOUTB
EP
11
8 VINB-
7 VINB+
6 CSB
MCP639
4x4 QFN*
16 15 14 13
VINA- 1
12 VIND+
VINA+ 2
VDD 3
EP 11 VSS
17 10 VINC+
VINB+ 4
9 VINC-
567 8
* Includes Exposed Thermal Pad (EP); see Table 3-1.
DS20002197C-page 2
2009-2014 Microchip Technology Inc.

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MCP631/2/3/4/5/9
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings †
VDD – VSS .......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (VIN+ and VIN–) †† . VSS – 1.0V to VDD + 1.0V
All other Inputs and Outputs .......... VSS – 0.3V to VDD + 0.3V
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Maximum Junction Temperature ................................ +150°C
ESD protection on all pins (HBM, MM)  1 kV, 200V
Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1.2 “Input Voltage and Current Limits”.
1.2 Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/3,
VOUT VDD/2, VL = VDD/2, RL = 2 kto VL and CS = VSS (refer to Figure 1-2).
Parameters
Sym.
Min.
Typ.
Max. Units
Conditions
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
Power Supply Rejection Ratio
Input Current and Impedance
Input Bias Current
Across Temperature
Across Temperature
Input Offset Current
Common-Mode Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
VOS
VOS/TA
PSRR
IB
IB
IB
IOS
ZCM
ZDIFF
VCMR
CMRR
AOL
VOL, VOH
-8
61
VSS 0.3
63
66
88
94
VSS + 20
±1.8
±2.0
76
4
100
1500
±2
1013||9
1013||2
78
81
115
124
+8
5000
VDD 1.3
VDD 20
VSS + 40 — VDD 40
Output Short-Circuit Current
Power Supply
ISC ±40 ±85 ±130
ISC ±35 ±70 ±110
Supply Voltage
VDD
2.5
5.5
Quiescent Current per Amplifier
IQ 1.2 2.5 3.6
Note 1: See Figure 2-5 for temperature effects.
2: The ISC specifications are for design guidance only; they are not tested.
mV
µV/°C
dB
TA = -40°C to +125°C
pA
pA
pA
pA
||pF
||pF
TA = +85°C
TA = +125°C
V Note 1
dB VDD = 2.5V, VCM = -0.3V to 1.2V
dB VDD = 5.5V, VCM = -0.3V to 4.2V
dB VDD = 2.5V, VOUT = 0.3V to 2.2V
dB VDD = 5.5V, VOUT = 0.3V to 5.2V
mV VDD = 2.5V, G = +2,
0.5V Input Overdrive
mV VDD = 5.5V, G = +2,
0.5V Input Overdrive
mA VDD = 2.5V (Note 2)
mA VDD = 5.5V (Note 2)
V
mA No Load Current
2009-2014 Microchip Technology Inc.
DS20002197C-page 3

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MCP631/2/3/4/5/9
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS (refer to Figure 1-2).
Parameters
Sym. Min. Typ. Max. Units
Conditions
AC Response
Gain-Bandwidth Product
Phase Margin
Open-Loop Output Impedance
AC Distortion
Total Harmonic Distortion plus Noise
Step Response
Rise Time, 10% to 90%
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
GBWP — 24 —
PM — 65 —
ROUT
20
THD + N — 0.0015 —
tr — 20 —
SR — 10 —
MHz
°
G = +1
% G = +1, VOUT = 2VP-P, f = 1 kHz,
VDD = 5.5V, BW = 80 kHz
ns G = +1, VOUT = 100 mVP-P
V/µs G = +1
Eni — 16 — µVP-P f = 0.1 Hz to 10 Hz
eni — 10 — nV/Hz f = 1 MHz
ini 4 — fA/Hz f = 1 kHz
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS (refer to Figures 1-1 and 1-2).
Parameters
Sym. Min. Typ. Max. Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
CS Internal Pull-Down Resistor
Amplifier Output Leakage
CS Dynamic Specifications
CS Input Hysteresis
CS High to Amplifier Off Time
(output goes High Z)
CS Low to Amplifier On Time
VIL VSS — 0.2VDD V
ICSL — 0.1 — nA CS = 0V
VIH
ICSH
ISS
RPD
IO(LEAK)
0.8VDD
-2
0.7
-1
5
50
VDD
V
— µA CS = VDD
— µA
— M
— nA CS = VDD, TA = +125°C
VHYST
tOFF
tON
0.25
200
2
10
V
ns G = +1 V/V, VL = VSS,
CS = 0.8VDD to VOUT = 0.1(VDD/2)
µs G = +1 V/V, VL = VSS,
CS = 0.2VDD to VOUT = 0.9(VDD/2)
DS20002197C-page 4
2009-2014 Microchip Technology Inc.

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MCP631/2/3/4/5/9
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.5V to +5.5V, VSS = GND.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
TA -40 — +125 °C
Operating Temperature Range
TA -40 — +125 °C Note 1
Storage Temperature Range
TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θJA — 201.0 — °C/W
Thermal Resistance, 6L-SOT-23
θJA — 190.5 — °C/W
Thermal Resistance, 8L-2x3 TDFN
θJA
— 52.5 — °C/W
Thermal Resistance, 8L-3x3 DFN
θJA — 56.7 — °C/W Note 2
Thermal Resistance, 8L-SOIC
θJA — 149.5 — °C/W
Thermal Resistance, 10L-3x3 DFN
θJA
— 54.0 — °C/W Note 2
Thermal Resistance, 10L-MSOP
θJA — 202 — °C/W
Thermal Resistance, 14L-SOIC
θJA — 90.8 — °C/W
Thermal Resistance, 14L-TSSOP
θJA — 100 — °C/W
Thermal Resistance, 16L-4x4-QFN
θJA
— 52.1 — °C/W Note 2
Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
2: Measured on a standard JC51-7, four-layer printed circuit board with ground plane and vias.
1.3 Timing Diagram
ICS
0.7 µA
(typical)
0.1 nA
(typical)
0.7 µA
(typical)
CS VIL
tON
VIH
tOFF
VOUT High Z On High Z
ISS
-1 µA
(typical)
-2.5 mA
(typical)
-1 µA
(typical)
FIGURE 1-1:
Timing Diagram.
1.4 Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-2. It independently sets VCM and VOUT; see
Equation 1-1. The circuit’s Common-Mode voltage is
(VP + VM)/2, not VCM. VOST includes VOS plus the
effects of temperature, CMRR, PSRR and AOL.
EQUATION 1-1:
GDM
=
-R----F-
RG
GN = 1 + GDM
VCM
=
VP1 G---1--N--
+
VR
E
F
G---1--N--
VOST = VIN- VIN+
VOUT = VREF + VP VMGDM + VOSTGN
Where:
GDM = Differential Mode Gain
GN = Noise Gain
VCM = Op Amp’s Common-Mode
Input Voltage
VOST = Op Amp’s Total Input Offset
Voltage
(V/V)
(V/V)
(V)
(mV)
2009-2014 Microchip Technology Inc.
DS20002197C-page 5