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This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOS FETs
2SK3268
Silicon N-channel power MOS FET
Features
Avalanche energy capability guaranteed
High-speed switching
Low ON resistance Ron
No secondary breakdown
Low-voltage drive
High electrostatic energy capability
Applications
Non-contact relay
Solenoid drive
Motor drive
Control equipment
Switching mode regulator
Package
Code
U-DL
Pin Name
1: Gate
2: Drain
3: Source
Marking Symbol: K3268
Internal Connection
D
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
VGSS
ID
IDP
EAS
100
±20
±15
±60
22.5
Power dissipation
Channel temperature
Storage temperature
PD 20
Ta = 25°C
1
Tch 150
Tstg 55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
G
S
Note) *: L = 0.2 mH, IL = 15 A, 1 pulse
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Diode forward voltage
Short-circuit forward transfer capacitance
(Common source)
VDSS
IDSS
IGSS
Vth
Yfs
RDS(on)
VDF
Ciss
Conditions
ID = 1 mA, VGS = 0
VDS = 80 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 12 A
IDR = 15 A, VGS = 0
VDS = 10 V, VGS = 0, f = 1 MHz
Min Typ Max Unit
100 V
10 µA
±1 µA
2.0 4.0 V
6 11
S
70 100 m
1.4 V
960 pF
Short-circuit output capacitance
(Common source)
Coss
285 pF
Reverse transfer capacitance
(Common source)
Crss
85 pF
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
VDD = 30 V, ID = 12 A, RL = 2.5
VGS = 10 V
15 ns
10 ns
35 ns
65 ns
6.25 °C/W
125 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2008
SJG00031BED
1

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2SK3022
This product complies with the RoHS Directive (EU 2002/95/EC).
U-DL
Unit: mm
6.5 ±0.1
5.3 ±0.1
4.35 ±0.1
2.3 ±0.1
0.5 ±0.1
123
2.3 ±0.1
4.6 ±0.1
0.75 ±0.1
1.0 ±0.1
0.1 ±0.05
0.5 ±0.1
(5.3)
(4.35)
(3.0)
2 SJG00031BED

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semiconductors described in this book
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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