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CPH3348
Power MOSFET
–12V, 70m, –3A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
1.8V drive
Pb-Free and RoHS compliance
Halogen Free compliance : CPH3348-TL-W
Typical Applications
Load Switch
DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
12 V
Gate to Source Voltage
VGSS
10 V
Drain Current (DC)
ID 3 A
Drain Current (Pulse)
PW 10s, duty cycle 1%
IDP
12 A
Power Dissipation
When mounted on ceramic substrate
(1200mm2 0.8mm)
PD
1.0 W
Junction Temperature
Tj 150 C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
*Machine Model
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1200mm2 0.8mm)
Symbol
RJA
Value
Unit
125 C/W
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VDSS
12V
RDS(on) Max
70m@ 4.5V
115m@ 2.5V
215m@ 1.8V
ID Max
3A
ELECTRICAL CONNECTION
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 2
1
Publication Order Number :
CPH3348/D

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CPH3348
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=12V, VGS=0V
VGS=8V, VDS=0V
VDS=6V, ID=1mA
VDS=6V, ID=1.5A
ID=1.5A, VGS=4.5V
ID=0.8A, VGS=2.5V
ID=0.3A, VGS=1.8V
12 V
10 A
10 A
0.4 1.4 V
4.3 S
54 70 m
80 115 m
125 215 m
405 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=6V, f=1MHz
145 pF
100 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
8.8 ns
80 ns
41 ns
50 ns
5.6 nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=6V, VGS=4.5V, ID=3A
Qgd
0.7 nC
1.6 nC
Forward Diode Voltage
VSD
IS=3A, VGS=0V
0.85
1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10s
D.C.1%
G
VDD= --6V
ID= --1.5A
RL=4
D VOUT
CPH3348
P.G 50S
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CPH3348
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