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CPH3348
Power MOSFET
–12V, 70m, –3A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
1.8V drive
Pb-Free and RoHS compliance
Halogen Free compliance : CPH3348-TL-W
Typical Applications
Load Switch
DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
12 V
Gate to Source Voltage
VGSS
10 V
Drain Current (DC)
ID 3 A
Drain Current (Pulse)
PW 10s, duty cycle 1%
IDP
12 A
Power Dissipation
When mounted on ceramic substrate
(1200mm2 0.8mm)
PD
1.0 W
Junction Temperature
Tj 150 C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
*Machine Model
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1200mm2 0.8mm)
Symbol
RJA
Value
Unit
125 C/W
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VDSS
12V
RDS(on) Max
70m@ 4.5V
115m@ 2.5V
215m@ 1.8V
ID Max
3A
ELECTRICAL CONNECTION
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 2
1
Publication Order Number :
CPH3348/D

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CPH3348
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=12V, VGS=0V
VGS=8V, VDS=0V
VDS=6V, ID=1mA
VDS=6V, ID=1.5A
ID=1.5A, VGS=4.5V
ID=0.8A, VGS=2.5V
ID=0.3A, VGS=1.8V
12 V
10 A
10 A
0.4 1.4 V
4.3 S
54 70 m
80 115 m
125 215 m
405 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=6V, f=1MHz
145 pF
100 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
8.8 ns
80 ns
41 ns
50 ns
5.6 nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=6V, VGS=4.5V, ID=3A
Qgd
0.7 nC
1.6 nC
Forward Diode Voltage
VSD
IS=3A, VGS=0V
0.85
1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10s
D.C.1%
G
VDD= --6V
ID= --1.5A
RL=4
D VOUT
CPH3348
P.G 50S
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CPH3348
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CPH3348
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PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
CPH3348
1 : Gate
2 : Source
3 : Drain
Recommended
Soldering Footprint
0.6
0.95 0.95
ORDERING INFORMATION
Device
CPH3348-TL-E
CPH3348-TL-W
Marking
WE
Package
CPH3
SC-59, SOT-23, TO-236
(Pb-Free)
CPH3
SC-59, SOT-23, TO-236
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the CPH3348 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
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