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Data Sheet
10V Drive Nch MOSFET
R5019ANJ
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
LPTS
TO-263(D2PAK)
10.1
4.5 1.3
(1) Gate
(2) Drain
(3) Source
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R5019ANJ
Taping
TL
1000
Inner circuit
1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
500
30
19
76
19
76
9.5
24.3
100
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
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1/5
2011.10 - Rev.A

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R5019ANJ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
RDS
*
(on)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min.
-
500
-
2.5
-
6.5
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
0.18
-
2050
1200
50
40
115
165
100
55
11
24
Max.
100
-
100
4.5
0.24
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
nA VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=500V, VGS=0V
V VDS=10V, ID=1mA
ID=9.5A, VGS=10V
S VDS=10V, ID=9.5A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 250V, ID=9.5A
ns VGS=10V
ns RL=26.3
ns RG=10
nC VDD 250V
nC ID=19A
nC VGS=10V
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5 V IS=19A, VGS=0V
Data Sheet
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2011.10 - Rev.A

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R5019ANJ
Electrical characteristic curves
 
Data Sheet
Fig.1 Typical Output Characteristics ()
5
Ta=25VGS=10.0V
pulsed VGS=8.0V
4 VGS= 7.0V
VGS=6.5V
3 VGS=6.0V
VGS=5.0V
2
1
VGS=4.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics ()
18
Ta=25
16 VGS=10.0V pulsed
14 VGS=8.0V
VGS=6.5V
12 VGS=7.0V
10 VGS=6.0V
8
6 VGS=5.0V
4
2 VGS=4.5
0
0 1 2 3 4 5 6 7 8 9 10
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
100
VDS= 10V
Pulsed
10
Ta=125
Ta= 75
1 Ta= 25
Ta= -25
0.1
0.01
0.001
0
1234567
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
6
VDS= 10V
5 ID= 1mA
4
3
2
1
0
-50
0 50 100 150
CHANNEL TEMPERATURE: Tch ()
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
10
VGS= 10V
Pulsed
1
Ta=125
Ta= 75
Ta= 25
Ta= -25
0.1
0.01
0.1
1 10
DRAIN CURRENT : ID (A)
100
Fig.6 Static Drain-Source On-State Resistance vs.
Gate-Source Voltage
0.5
Ta=25
pulsed
0.4
0.3 ID=19A
0.2
ID=9.5A
0.1
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
0.5
VGS= 10V
Pulsed
0.4
0.3 ID= 19.0A
ID= 9.5A
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE: Tch ()
Fig.8 Forward Transfer Admittance
vs. Drain Current
100
VDS= 10V
Pulsed
10
1
0.1
0.01
0.01
Ta=125
Ta= 75
Ta= 25
Ta= -25
0.1 1 10
DRAIN CURRENT : ID (A)
100
Fig.9 Source Current vs.
Sourse-Drain Voltage
100
VGS= 0V
Pulsed
10
1
Ta=125
Ta= 75
Ta= 25
0.1 Ta= -25
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
SOURCE-DRAIN VOLTAGE : VSD (V)
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R5019ANJ
 
Data Sheet
10000
1000
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
Ciss
100
Coss
10 Ta= 25
f= 1MHz
VGS= 0V
1
0.01 0.1
1
Crss
10 100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Dynamic Input Characteristics
15
Ta= 25
VDD= 250V
ID= 19A
RG= 10Ω
10 Pulsed
10000
1000
Fig.12 Reverse Recovery Time
vs.Source Current
5
0
0 10 20 30 40 50 60 70
TOTAL GATE CHARGE : Qg (nC)
100
10
0
Ta= 25
di / dt= 100A / μs
VGS= 0V
Pulsed
1 10
SOURCE CURRENT : IS (A)
100
10000
1000
100
Fig.13 Switching Characteristics
td(off)
VDD= 250V
VGS= 10V
RG= 10Ω
Ta= 25
tf Pulsed
10
1
0.01
tr td(on)
0.1 1 10
DRAIN CURRENT : ID (A)
100
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R5019ANJ
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
 
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.3-1 Avalanche Measurement Circuit
V(BR)DSS
IAS
VDD
EAS =
1
2
L IAS2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.10 - Rev.A