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R5021ANX
Nch 500V 21A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
500V
0.21W
21A
50W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
lApplication
Switching Power Supply
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
-
-
500
Taping code
-
Marking
R5021ANX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
500
21
10.1
84
30
29.6
3.5
10.5
50
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
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© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.10 - Rev.C

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R5021ANX
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 400V, ID = 21A
Tj = 125°C
Values
50
Unit
V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 2.5 °C/W
- - 70 °C/W
- - 265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
500 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DS VGS = 0V, ID = 21A
- 580 -
V
Zero gate voltage
drain current
VDS = 500V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
0.1 100 mA
- 1000
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
2.5
-
4.5
V
Static drain - source
on - state resistance
VGS = 10V, ID = 10.5A
RDS(on) *6 Tj = 25°C
-
0.16 0.21
W
Tj = 125°C
- 0.33 -
Gate input resistance
RG f = 1MHz, open drain - 11.6 -
W
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© 2012 ROHM Co., Ltd. All rights reserved.
2/13
2012.10 - Rev.C

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R5021ANX
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
gfs *6
Ciss
Coss
Crss
VDS = 10V, ID = 10.5A
VGS = 0V
VDS = 25V
f = 1MHz
Values
Min. Typ. Max.
7 15 -
- 2300 -
- 1000 -
- 70 -
Effective output capacitance,
energy related
Effective output capacitance,
time related
Co(er)
Co(tr)
VGS = 0V
VDS = 0V to 400V
- 143 -
- 146 -
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *6
tr *6
td(off) *6
tf *6
VDD 250V, VGS = 10V
ID = 10.5A
RL = 23.8W
RG = 10W
-
-
-
-
47 -
70 -
200 400
70 140
Unit
S
pF
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *6
Qgs *6
Qgd *6
V(plateau)
VDD 250V
ID = 21A
VGS = 10V
VDD 250V, ID = 21A
Values
Min. Typ. Max.
- 64 -
- 11 -
- 27 -
- 5.8 -
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
3/13
2012.10 - Rev.C

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R5021ANX
Data Sheet
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS *1
ISM *2
Tc = 25°C
VSD *6
trr *6
Qrr *6
Irrm *6
VGS = 0V, IS = 21A
IS = 21A
di/dt = 100A/us
dirr/dt Tj = 25°C
- - 21
- - 84
- - 1.5
- 477 -
- 7.8 -
- 32.7 -
- 910 -
Unit
A
A
V
ns
mC
A
A/ms
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 0.0919
Rth2
0.607
K/W
Rth3 2.14
Symbol
Cth1
Cth2
Cth3
Value
0.00395
0.0549
0.53
Unit
Ws/K
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© 2012 ROHM Co., Ltd. All rights reserved.
4/13
2012.10 - Rev.C

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R5021ANX
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
1000
100
10
Operation in
this area is
limited
by RDS(ON)
PW = 100us
1
PW = 1ms
0.1
Ta = 25ºC
Single Pulse
0.01
0.1
1
PW = 10ms
10 100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = (t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
0.01
0.001
0.0001
0.0001
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 100
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.10 - Rev.C