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4V Drive Nch+Nch MOSFET
SH8K3
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8K3
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw 10μs, Duty cycle 1%
2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
±20
±7.0
±28
1.6
6.4
2
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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SH8K3
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
V ID=1mA, VGS=0V
1 μA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS
(on)
17 24
ID=7.0A, VGS=10V
23 33 mΩ ID=7.0A, VGS=4.5V
25 35
ID=7.0A, VGS=4V
Forward transfer admittance
Yfs 5.0
S ID=7.0A, VDS=10V
Input capacitance
Ciss
600
pF VDS=10V
Output capacitance
Coss 200 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
120
8
10
37
11
8.4 11.8
1.9
3.3
pF f=1MHz
ns ID=3.5A, VDD 15V
ns VGS=10V
ns RL=4.29Ω
ns RG=10Ω
nC VDD 15V
nC VGS=5V
nC ID=7.0A
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS=6.4A, VGS=0V
Data Sheet
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SH8K3
Electrical characteristic curves
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
100
Crss
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
100
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
100 Ta= −25°C
VGS=10V
Pulsed
10
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10000
1000 tf
td (off)
100
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
tr
10
td (on)
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
300
Ta=25°C
Pulsed
250
200
ID=7A
ID=3.5A
150
100
50
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
100 Ta= −25°C
VGS=4.5V
Pulsed
10
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Data Sheet
10
Ta=25°C
9 VDD=15V
8
ID=7A
RG=10Ω
7 Pulsed
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
100
Ta=125°C
10 Ta=75°C
Ta=25°C
Ta= −25°C
1
VGS=0V
Pulsed
0.1
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
100 Ta= −25°C
VGS=4V
Pulsed
10
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
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