SH8J62.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 SH8J62 데이타시트 다운로드

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4V Drive Pch+Pch MOSFET
SH8J62
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SH8J62
Taping
TB
2500
Inner circuit
(8) (7) (6)
(5)
2 2
1 1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10μs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
±20
±4.5
±18
1.6
18
2.0
1.4
150
55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
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1/5
2010.01 - Rev.A

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SH8J62
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS
(on)
40 56 mΩ ID= −4.5A, VGS= −10V
55 77 mΩ ID= −2.5A, VGS= −4.5V
60 84 mΩ ID= −2.5A, VGS= −4.0V
Forward transfer admittance
Yfs 3.5
S VDS= −10V, ID= −4.5A
Input capacitance
Ciss
800
pF VDS= −10V
Output capacitance
Coss 120 pF VGS=0V
Reverse transfer capacitance Crss
110
Turn-on delay time
td (on) 7
Rise time
tr 15
Turn-off delay time
td (off) 70
Fall time
tf 50
Total gate charge
Qg 8.0
Gate-source charge
Qgs 2.5
Gate-drain charge
Qgd 3.0
Pulsed
pF f=1MHz
ns ID= −2.5A
ns VDD 15V
VGS= −10V
ns RL=6.0Ω
ns RG=10Ω
nC VDD 15V
nC
ID= −4.5A
VGS= −5V
nC RL=3.3Ω / RG=10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
VSD
− −1.2 V
Conditions
IS= −4.5A, VGS=0V
Data Sheet
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2010.01 - Rev.A

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SH8J62
Electrical characteristic curves
20
Ta=25°C
Pulsed
15 VGS= -10V
VGS= -4.5V
VGS= -4.0V
10
5 VGS= -3.5V
VGS= -3.0V
0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics( )
20
18 Ta=25°C
16 VGS= -10V Pulsed
14 VGS= -4.5V
12 VGS= -4.0V
VGS= -3.8V
10
8
6 VGS= -3.2V
4
2
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical output characteristics( )
Data Sheet
10
VDS= -10V
Pulsed
Ta= 125°C
1 Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
1000
Ta=25°C
Pulsed
100
VGS= -4.0V
VGS= -4.5V
VGS= -10V
1000
VGS= -10V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
VGS= -4.5V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( )
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( )
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( )
1000
VGS= -4.0V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( )
10
VDS= -10V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
VGS=0V
Pulsed
1
Ta=125°C
0.1 Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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SH8J62
200 10000
Ta=25°C
Ta=25°C
150
Pulsed
ID= -4.5A
1000
td(off)
VDD= -15V
VGS=-10V
ID= -2.5A
tf RG=10Ω
Pulsed
100 100
tr td(on)
50 10
0
0 5 10 15
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.11 Switching Characteristics
Data Sheet
10
8
6
4 Ta=25°C
VDD= -15V
ID= -4.5A
2 RG=10Ω
Pulsed
0
0 5 10 15
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
10
0.01
0.1
Crss
1 10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
1000
100
Operation in this area is limited by RDS(on)
(VGS=-10V)
PW = 1ms
PW=100us
10
1 PW=10ms
DC operation
0.1
0.01
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
0.1 1 10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Maximum Safe Operating Area
10
1
0.1
0.01
0.001
0.001
0.01
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.1 1 10
PULSE WIDTH : Pw(s)
100 1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2010.01 - Rev.A

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SH8J62
Measurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Test Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Test Circuit
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
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c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.01 - Rev.A