9015.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 9015 데이타시트 다운로드

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9015
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.

特征 / Features
PC 大,hFE 高而且特性好,与 9014 互补。
High PC, excellent hFE linearity, complementary pair with 9014.

用途 / Applications
用于低电平、低噪声的前置放大器。
Low frequency, low noise amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
A
60~150
B
100~300
C
200~600
D
400~1000
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9015
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-50
-45
-5.0
-100
450
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=-0.1mA IE=0
VCEO IC=-1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=-0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=-50V IE=0
Emitter Cut-Off Current
IEBO VEB=-5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE
VCE(sat)
VCE=-5.0V
IC=-100mA
IC=-1.0mA
IB=-5.0mA
Base to Emitter Saturation Voltage VBE(sat) IC=-100mA IB=-5.0mA
Base to Emitter Voltage
VBE VCE=-5.0V IC=-2.0mA
Transition Frequency
Collector Output Capacitance
Noise Figure
fT VCE=-5.0V IC=-10mA
Cob
VCB=-10V
f=1.0MHz
IE=0
VCE=-5.0V IC=-0.2mA
NF Rg=2.0Kf=1.0KHz
f=200Hz
最小值 典型值 最大值 单位
Min Typ Max Unit
-50 V
-45 V
-5.0 V
-0.05 μA
-0.05 μA
60 1000
-0.2 -0.7 V
-0.82 -1.0 V
-0.65 -0.75 V
100 190
MHz
4.5 7.0 pF
0.7 10 dB
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9015
Rev.F Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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