F10UP60S.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 F10UP60S 데이타시트 다운로드

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FFPF10UP60S
10 A, 600 V Ultrafast Diode
Features
• Ultrafast Recovery trr = 40 ns (@ IF = 1 A)
• Max Forward Voltage, VF = 2.2 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• General Purpose
• SMPS, Power Switching Circuits
• Free-Wheeling Diode for Motor Application
• Welder, UPS
Pin Assignments
November 2014
Description
The FFPF10UP60S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use
as freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It is spe-
cially suited for use in switching power supplies and industrial
applicationa as welder and UPS application.
TO-220F-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VRRM
VRWM
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 60 C
TJ, TSTG
Operating Junction and Storage Temperature
Rating
600
600
10
50
- 65 to +175
Unit
V
V
A
A
C
Thermal CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
RJC
Maximum Thermal Resistance, Junction to Case
Max.
4.5
Unit
C/W
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FFPF10UP60STU FFPF10UP60S TO-220F-2L
Tube
Reel Size
N/A
Tape Width Quantity
N/A 30
©2004 Fairchild Semiconductor Corporation
FFPF10UP60S Rev. C2
1
www.fairchildsemi.com

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Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
Conditions
VF1 Maximum Instantaneous Forward Voltage
IF = 10 A
IF = 10 A
IR1 Maximum Instantaneous Reverse Current
@ rated VR
trr
trr
Irr
Qrr
trr
WAVL
IF =1 A, diF/dt = 100 A/s, VR= 30 V
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
(IF =8 A, diF/dt = 200 A/s, VR = 390 V)
Maximum Reverse Recovery Time
(IF =10 A, diF/dt = 200 A/s, VR =390 V)
Avalanche Energy (L = 40 mH)
Notes:
1. Pulse : Test Pulse width = 300s, Duty Cycle = 2%
Test Circuit and Waveforms
Min. Typ. Max. Unit
TC = 25 C
TC = 100 C
TC = 25 C
TC = 100 C
TC = 25 C
-
-
-
-
-
-
-
-
- 2.2 V
- 2.0
- 100 A
- 500
- 25 ns
34 40 ns
1.0 1.5
A
17 30 nC
- 58 - ns
20 -
- mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2004 Fairchild Semiconductor Corporation
FFPF10UP60S Rev. C2
2
www.fairchildsemi.com

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Typical Performance Characteristics TC = 25°C unless otherwise noted
Figure 3. Typical Forward Voltage Drop
30
Figure 4. Typical Reverse Current
1000
10
TC = 100oC
TC = 25oC
1
100
TC = 100oC
10
1
0.1 TC = 25oC
0.1
0.0
0.5 1.0 1.5 2.0 2.5
Forward Voltage , VF [V]
3.0
Figure 5. Typical Junction Capacitance
50
Typical Capacitance
at 0V = 51.4 pF
0.01
1E-3
100 200 300 400 500 600
Reverse Voltage , VR [V]
Figure 6. Typical Reverse Recovery Time
70
IF = 10A
TC = 25oC
60
25
50
1
0.1 1 10 100
Reverse Voltage , VR [V]
Figure 7. Typical Reverse Recovery Current
10
9
8
7
6
5
4
3
2
1
0
100
IF = 10A
TC = 25oC
150 200 250 300 350 400 450 500
diF/dt [A/s]
40
100
150 200 250 300 350 400 450 500
diF/dt [A/s]
Figure 8. Forward Current Deration Curve
10
5
0
40 60 80 100 120 140 160
Case Temperature , TC [oC]
©2004 Fairchild Semiconductor Corporation
FFPF10UP60S Rev. C2
3
www.fairchildsemi.com