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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1186
DESCRIPTION
www.datasheet4u.com
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Power switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
5
7
50
150
-45~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1186
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICES Collector cut-off current
VCE=1500V; RBE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=0.3A ; VCE=5V
Switching times
tf Fall time
ts Storage time
IC=4A ;IB1=0.8A; IB2=-2A
MIN TYP. MAX UNIT
6V
800 V
5.0 V
1.5 V
0.5 mA
0.1 mA
10 30
1.0 µs
1.0 µs
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1186
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3