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Z ibo Seno Electronic Engineering Co., Ltd.
SB520 – SB5200
5.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
AB
Inverters, Free Wheeling, and Polarity
Protection Applications
D
A
C
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
DO-201AD
Dim Min Max
A 25.4 —
B 7.20 9.50
C 1.20 1.30
D 4.80 5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol SB520 SB530 SB540 SB550 SB560 SB580 SB5100 SB5150 SB5200 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
20
30
40
50
60
80 100 150 200
V
VR
RMS Reverse Voltage
VR(RMS)
14
21
28 35
42 56
70 105 140
V
Average Rectified Output Current
(Note 1)
@TL = 95°C
IO
5.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 5.0A
VFM
0.5
0.75 0.85
0.92 V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
IRM
0.5
20
0.02 mA
10
Typical Junction Capacitance (Note 2)
Cj
250
pF
Typical Thermal Resistance (Note 1)
RJA
20
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB520 – SB5200
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Z ibo Seno Electronic Engineering Co., Ltd.

5.0
4.0
SB520 – SB5200
40
SB520-SB540
10
3.0 SB550-SB560
SB580-SB5200
2.0 1.0
1.0
0
25
50 75 100 125 150
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
120
Single Half-Sine-Wave
(JEDEC Method)
90
Tj - 25°C
0.1
0
IF Pulse Width = 300µs
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
3000
Tj = 25°C
1000
SB520-SB540
60
30
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
Tj = 125°C
10
SB550-SB5200
100
0.1
1.0 10
Fig.V4R,
REVERSE VOLTAGE (V)
Typical Junction Capacitance
100
SB520 – SB5200
1.0
0.1 Tj = 75°C
0.01
Tj = 25°C
0.001
0
20 40 60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2 of 2
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