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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0093 Rev. -
Applications:
SB5150 SCHOTTKY RECTIFIER
z Switching power supply
z Converters
z Free-Wheeling diodes
z Reverse battery protection
z Disk drives
z Battery charging
Features:
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z High Current Capability
z Low Power Loss, High Efficiency
z High Surge Current Capability
z For Use in Low Voltage, High Frequency Inverters, Free Wheeling,
and Polarity Protection Applications
z This is a Pb Free Device
z All SMC parts are traceable to the wafer lot
z Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
SB5150
Green Products
DO-201AD
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0093 Rev. -
Marking Diagram:
CautionsMolding resin
Epoxy resin UL:94V-0
SB5150
Green Products
Where XXXXX is YYWWL
SB
5
150
SSG
YY
WW
L
= Device Type
= Forward Current (5A)
= Reverse Voltage (150V)
= SSG
= Year
= Week
= Lot Number
Ordering Information:
Device
SB5150
Package
DO-201AD
(Pb-Free)
Shipping
1250 pcs / tape
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle
Non-Repetitive Surge Current
(per leg)
Symbol
VRWM
IF(AV)
Condition
-
50% duty cycle @TC =105°C,
rectangular wave form
IFSM 8.3 ms, half Sine pulse
Max.
150
5
120
Units
V
A
A
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0093 Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage
Drop(per leg)*
Max. Reverse Current at DC
condition
Max. Reverse Current *
Max. Junction Capacitance
Typical Series Inductance
Max. Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 5A, Pulse, TJ = 25 °C
@ 5A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
SB5150
Green Products
Max.
0.93
0.80
1
7.0
200
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Symbol
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal Resistance
Junction to Case
TJ
Tstg
RθJC
Approximate Weight
wt
Case Style
Condition
-
-
DC operation
-
DO-201AD
Specification
-55 to +150
-55 to +150
4.5
Units
°C
°C
°C/W
1.02 g
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn