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STB11NM80, STF11NM80
STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on)
max
RDS(on)*Qg
ID
STB11NM80
STF11NM80
STI11NM80 800 V
STP11NM80
STW11NM80
< 0.40 Ω
14Ω*nC
11 A
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)*Qg in the industry
Applications
Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STI11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
I11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
September 2011
Doc ID 9241 Rev 11
1/22
www.st.com
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Contents
Contents
STB/F/I/P/W11NM80
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 9241 Rev 11

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STB/F/I/P/W11NM80
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(2)
PTOT
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by the maximum temperature allowed
2. Pulse width limited by safe operating area
Value
D²PAK, I²PAK
TO-220, TO-247
800
±30
11
8
44
150
1.2
Unit
TO-220FP
11 (1)
8 (1)
44 (1)
35
0.28
2500
V
V
A
A
A
W
W/°C
V
-65 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-case
max
Rthj-a
Thermal resistance junction-
ambient max
Rthj-pcb(1)
Thermal resistance junction-pcb
max
Tl
Maximum lead temperature for
soldering purpose
0.83
30
3.6 0.83 °C/W
62.5 50 °C/W
°C/W
300 °C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.5
400
Unit
A
mJ
Doc ID 9241 Rev 11
3/22