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STB11NM80, STF11NM80
STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on)
max
RDS(on)*Qg
ID
STB11NM80
STF11NM80
STI11NM80 800 V
STP11NM80
STW11NM80
< 0.40 Ω
14Ω*nC
11 A
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)*Qg in the industry
Applications
Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STI11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
I11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
September 2011
Doc ID 9241 Rev 11
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Contents
Contents
STB/F/I/P/W11NM80
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 9241 Rev 11

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STB/F/I/P/W11NM80
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(2)
PTOT
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by the maximum temperature allowed
2. Pulse width limited by safe operating area
Value
D²PAK, I²PAK
TO-220, TO-247
800
±30
11
8
44
150
1.2
Unit
TO-220FP
11 (1)
8 (1)
44 (1)
35
0.28
2500
V
V
A
A
A
W
W/°C
V
-65 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-case
max
Rthj-a
Thermal resistance junction-
ambient max
Rthj-pcb(1)
Thermal resistance junction-pcb
max
Tl
Maximum lead temperature for
soldering purpose
0.83
30
3.6 0.83 °C/W
62.5 50 °C/W
°C/W
300 °C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.5
400
Unit
A
mJ
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Electrical characteristics
2 Electrical characteristics
STB/F/I/P/W11NM80
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage (VGS = 0)
dv/dt (1) Drain source voltage slope
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 250 µA
VDD = 640 V, ID = 11 A,
VGS = 10 V
VDS = 800 V,
VDS = 800 V @125°C
VGS = ±30 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 5.5 A
1. Characteristic value at turn off on inductive load
Min. Typ. Max. Unit
800 V
30 V/ns
10 µA
100 µA
100 nA
34 5V
0.35 0.40 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x RDS(on)max,
ID= 7.5 A
VDS =25 V, f=1 MHz,
VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDD=640 V, ID = 11 A
VGS =10 V
(see Figure 18)
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=400 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 17)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-8- S
1630
- 750 -
30
43.6
- 11.6 -
21
pF
pF
pF
nC
nC
nC
- 2.7 -
Ω
22 ns
17 ns
--
46 ns
15 ns
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STB/F/I/P/W11NM80
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=11 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
11 A
-
44 A
- 0.86 V
612
- 7.22
23.6
ns
µC
A
970
- 11.25
23.2
ns
µC
A
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