BZV55C39.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 BZV55C39 데이타시트 다운로드

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ZENER DIODES
FEATURES
Low cost
Smal lsize
Glass sealed
MECHANICAL DATA
Case: SOD-80 glass case
Terminals: solderable per MIL - STD - 202, method 208
Polarity:color band denotes cathode
Mounting position:any
Weight:0.05 grams
Glass-Encapsulate Diodes
BZV55C2V0---BZV55C75
Cathode indification
3.5 ±0.
0.4±0.1
LL-34(SOD-80) Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
Value
5001)
175
- 55 to + 175
Unit
mW
OC
OC
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Thermal Resistance Junction to Ambient Air
Symbol
RthA
Forward Voltage
VF
at IF = 100 mA
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Max.
0.3 1)
1
Unit
K/mW
V
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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Glass-Encapsulate Diodes
BZV55C2V0---BZV55C75
Type
Zener Voltage Range 1)
VZNOmM
VZ
at lZT
(V) (V) (mA)
Dynamic Resistance
Reverse Leakage Current
ZZT ZZK at IZK Ta = 25 OC Ta = 125 oC at VR
Max. () Max. () (mA) Max. (µA) Max. (µA) (V)
Temp. Coefficient
of Zener Voltage
TKvz (%/K)
BZV55C2V0 2
1.8...2.15
5
85
600 1
100
200
1 -0.09...-0.06
BZV55C2V2 2.2 2.08...2.33
5
85
600 1
75
160 1 -0.09...-0.06
BZV55C2V4 2.4 2.28...2.56
5
85
600 1
50
100 1 -0.09...-0.06
BZV55C2V7 2.7 2.5...2.9
5
85
600 1
10
50 1 -0.09...-0.06
BZV55C3V0 3
2.8...3.2
5
85
600 1
4
40 1 -0.08...-0.05
BZV55C3V3 3.3 3.1...3.5
5
85
600 1
2
40 1 -0.08...-0.05
BZV55C3V6 3.6 3.4...3.8
5
85
600 1
2
40 1 -0.08...-0.05
BZV55C3V9 3.9 3.7...4.1
5
85
600 1
2
40 1 -0.08...-0.05
BZV55C4V3 4.3 4...4.6
5 75 600 1
1
20 1 -0.06...-0.03
BZV55C4V7 4.7 4.4...5
5 60 600 1 0.5
10 1 -0.05...+0.02
BZV55C5V1 5.1 4.8...5.4
5
35
550 1
0.1
2 1 -0.02...+0.02
BZV55C5V6 5.6 5.2...6
5 25 450 1 0.1
2 1 -0.05...+0.05
BZV55C6V2 6.2 5.8...6.6
5
10
200 1
0.1
2 2 0.03...0.06
BZV55C6V8 6.8 6.4...7.2
5
8
150 1
0.1
2 3 0.03...0.07
BZV55C7V5 7.5 7...7.9 5 7 50 1 0.1
2 5 0.03...0.07
BZV55C8V2 8.2 7.7...8.7
5
7
50 1 0.1
2 6.2 0.03...0.08
BZV55C9V1 9.1 8.5...9.6
5
10
50 1 0.1
2 6.8 0.03...0.09
BZV55C10 10 9.4...10.6
5
15
70 1
0.1
2 7.5 0.03...0.1
BZV55C11 11 10.4...11.6
5
20
70 1
0.1
2 8.2 0.03...0.11
BZV55C12 12 11.4...12.7
5
20
90 1
0.1
2 9.1 0.03...0.11
BZV55C13 13 12.4...14.1
5
26
110 1
0.1
2 10 0.03...0.11
BZV55C15 15 13.8...15.6
5
30
110 1
0.1
2 11 0.03...0.11
BZV55C16 16 15.3...17.1
5
40
170 1
0.1
2 12 0.03...0.11
BZV55C18 18 16.8...19.1
5
50
170 1
0.1
2 13 0.03...0.11
BZV55C20 20 18.8...21.2
5
55
220 1
0.1
2 15 0.03...0.11
BZV55C22 22 20.8...23.3
5
55
220 1
0.1
2 16 0.04...0.12
BZV55C24 24 22.8...25.6
5
80
220 1
0.1
2 18 0.04...0.12
BZV55C27 27 25.1...28.9
5
80
220 1
0.1
2 20 0.04...0.12
BZV55C30 30 28...32 5 80 220 1 0.1
2 22 0.04...0.12
BZV55C33 33 31...35 5 80 220 1 0.1
2 24 0.04...0.12
BZV55C36 36 34...38 5 80 220 1 0.1
2 27 0.04...0.12
BZV55C39 39 37...41
2.5 90
500 0.5
0.1
5 30 0.04...0.12
BZV55C43 43 40...46
2.5 90
500 0.5
0.1
5 33 0.04...0.12
BZV55C47 47 44...50
2.5 110
600 0.5
0.1
5 36 0.04...0.12
BZV55C51 51 48...54
2.5 125
700 0.5
0.1
10 39 0.04...0.12
BZV55C56 56 52...60
2.5 135
700 0.5
0.1
10 43 0.04...0.12
BZV55C62 62 58...66
2.5 150 1000 0.5
0.1
10 47 0.04...0.12
BZV55C68 68 64...72
2.5 200 1000 0.5
0.1
10 51 0.04...0.12
BZV55C75 75 70...79
2.5 250 1000 0.5
0.1
10 56 0.04...0.12
1) Tested with pulses tp = 20 ms.
2) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect
the cathode
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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BZV55C2V0--- BZV55C75
Glass-Encapsulate Diodes
Typical Characteristics
FIG.2- POWER ,TEMPERATURE DERATING CURVE
500
400
300
200
100
50 100 150 200 300
TA(oC)
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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