2SB1370.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SB1370 데이타시트 다운로드

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2SB1370(PNP)
TO-220F Bipolar Transistors
TO-220F
1. BASE
2. COLLECTOR
123
3. EMITTE
Features
Breakdown Voltage High
Reverse Cut-off Current Small
Saturation Voltage Low
Collector Power dissipation
PCM : 2 W (Tamb=25)
30 W (Tcase=25)
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
TJ Junction temperature
Tstg Storage temperature
Dimensions in inches and (millimeters)
Value
-60
-60
-5
-3
150
-55-150
Units
V
V
V
A
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-50μA, IE=0
-60 V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-50μA, IC=0
ICBO
VCB=-60V, IE=0
IEBO VEB=-4V, IC=0
-60 V
-5 V
-10 μA
-10 μA
DC current gain
hFE * VCE=-5V, IC=-500mA
100 320
Collector-emitter saturation voltage
VCE(sat) * IC=-2A, IB=-0.2A
-1.5 V
Base-emitter saturation voltage
VBE(sat) * IC=-2A, IB=-0.2A
-1.5 V
Transition frequency
fT VCE=-5V, IC=-500mA,f=5MHz
15 MHz
Out capacitance
*Pulse test: tp300μS, δ≤0.02.
CLASSIFICATION OF hFE
Rank
Cob VCB= -10 V ,f=1MHZ
E
80
F
pF
Range
100-200
160-320

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Typical Characteristics
2SB1370(PNP)
TO-220F Bipolar Transistors