K1162.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 K1162 데이타시트 다운로드

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2SK1161, 2SK1162
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source

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2SK1161, 2SK1162
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1161
2SK1162
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
10
30
10
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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2SK1161, 2SK1162
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1161 V(BR)DSS
2SK1162
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1161 IDSS
drain current
2SK1162
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1161 RDS(on)
on state resistance 2SK1162
2.0
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max Unit
——V
——V
±10 µA
— 250 µA
0.6
0.7
7.0
1050
280
40
15
60
90
45
1.0
3.0
0.8
0.9
350 —
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *1
ID = 5 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1157, 2SK1158.
3

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2SK1161, 2SK1162
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30
10
3
DC OpePrWatio=n1(0Tms1(1m1ssh0o0t)µs
1.0 C = 25°C)
0.3 Ta = 25°C
2SK1162
0.1
1
3
2SK1161
10 30 100 300 1,000
Drain to Source Voltage VDS (V)
3
1.0 D = 1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
0.01
1 Shot Pulse
10 µ 100 µ
θch–c (t) = γS (t) · θch–c
θch–c = 1.25°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
4

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15.6 ± 0.3
φ3.2 ± 0.2
4.8 ± 0.2
1.5
Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
Conforms
5.0 g