J412.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 J412 데이타시트 다운로드

No Preview Available !

2SJ412
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ412
DC-DC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 0.15 (typ.)
High forward transfer admittance: |Yfs| = 7.7 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
16
64
60
292
16
6
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.08
83.3
Unit
°C/W
°C/W
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 , IAR = 16 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SJ412
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Gate-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 6 A
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ.
100
0.8
4.5
0.25
0.15
7.7
1100
210
440
Max
±10
100
2.0
0.32
0.21
Unit
μA
μA
V
V
S
pF
pF
pF
tr
0V
VGS
ton 10 V
tf
18
ID = 8 A
VOUT
30
ns
VDD ≈ −50 V
18
toff Duty 1%, tw = 10 μs
65
Qg 48 nC
Qgs
VDD ≈ −80 V, VGS = 10 V, ID = 16 A
29
nC
Qgd 19 nC
Source-Drain Rating and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 16 A, VGS = 0 V
IDR = 16 A, VGS = 0 V
dIDR/dt = 50 A/μs
Min Typ. Max Unit
― ― −16 A
― ― −64 A
― ― 1.7 V
160
ns
0.5 ― μC
Marking
J412
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Part No. (or abbreviation code)
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Please contact your TOSHIBA sales representative for details as to
Note 4
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29

No Preview Available !

ID – VDS
5
4 3
8
4
10 6
Common source
3 Tc = 25°C
Pulse test
2.5
2
1
VGS = 2 V
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage VDS (V)
ID – VGS
10
Common source
VDS = 10 V
Pulse test
8
25
Tc = 55°C
6 100
4
2
0
0 1 2 3 4 5 6
Gate-source voltage VGS (V)
2SJ412
20
16
12
8
4
0
0
8
10
ID – VDS
Common source
Tc = 25°C
Pulse test
6
4.0
3.5
3
2.5
VGS = 2 V
2 4 6 8 10
Drain-source voltage VDS (V)
3.2
2.4
1.6
0.8
0
0
VDS – VGS
Common source
Tc = 25°C
Pulse test
ID = 8 A
4
2
4 8 12 16
Gate-source voltage VGS (V)
20
|Yfs| – ID
30
Common source
VDS = 10 V
Pulse test
10
Tc = 55°C
5 100
3
25
1
0.3
1.0
3
10 20
Drain current ID (A)
RDS (ON) – ID
2.0
Common source
Tc = 25°C
1.0 Pulse test
0.5
0.3 VGS = 4 V
10
0.1
0.05
0.03
0.1
0.3
1.0
3
Drain current ID (A)
10 20
3 2009-09-29

No Preview Available !

RDS (ON) – Tc
0.5
Common source
Pulse test
0.4
ID = 8 A
4
8
0.3
0.2 VGS = 4 V
2, 4
2
0.1
VGS = 10 V
0
80 40
0
40 80 120
Case temperature Tc (°C)
160
Capacitance – VDS
5000
3000
1000
Ciss
500
300 Coss
Common source
100 VGS = 0 V
50 f = 1 MHz
Tc = 25°C
Crss
30
0.1 0.3 1 3 10 30 100
Drain-source voltage VDS (V)
2SJ412
IDR – VDS
30
Common source
Tc = 25°C
Pulse test
10
5
VGS = 10 V
3
1.0
0.5
0.3
0
3
2
5
1
0, 1
0.2 0.4 0.6 0.8
Drain-source voltage VDS (V)
1.0
Vth – Tc
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
3
2
1
0
80 40 0 40 80 120
Case temperature Tc (°C)
160
PD – Tc
80
60
40
20
0
0 40 80 120 160
Case temperature Tc (°C)
100
80
Dynamic Input/Output Characteristic
Common source
ID = 16 A
Tc = 25°C
Pulse test
20
16
VDS
60
40
20 V
VDD = 80 V
12
40 V
8
20
0
0
VGS
20 40 60 80
Total gate charge Qg (nC)
4
0
100
4 2009-09-29

No Preview Available !

2SJ412
rth – tw
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.05
0.03
0.1
0.05
0.02
0.01
0.01
10 μ
Single pulse
100 μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.08°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe Operating Area
300
100
50
30
IC max (pulsed)*
ID max (continuous)
10
5 DC operation
3 Tc = 25°C
100 μs*
1 ms*
10 ms*
1
*: Single nonrepetitive pulse
0.5 Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
0.3 1 3 10
VDSS max
30 100
Drain-source voltage VDS (V)
300
500
400
300
200
100
0
25
EAS – Tch
50 75 100 125
Channel temperature Tch (°C)
150
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
RG = 25
VDD = 25 V, L = 1.84 mH
WAVE FORM
ΕAS
=
1·L·I2·
2
⎝⎛⎜⎜
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2009-09-29